MT28F004B3VG-8 TET TR Allicdata Electronics
Allicdata Part #:

MT28F004B3VG-8TETTR-ND

Manufacturer Part#:

MT28F004B3VG-8 TET TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4M PARALLEL 40TSOP I
More Detail: FLASH - NOR Memory IC 4Mb (512K x 8) Parallel 80n...
DataSheet: MT28F004B3VG-8 TET TR datasheetMT28F004B3VG-8 TET TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 80ns
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 40-TSOP I
Base Part Number: MT28F004B3
Description

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The MT28F004B3VG-8TETTR is a non-volatile memory that is specifically designed for use in applications requiring superior data retention in case of extreme temperature fluctuations. This type of memory is a type of TR technology developed by Mega Technology. It is a combination of EEPROM and DRAM memory types in one package.

TR technology uses a unique combination of charge trapping and read-while-write capabilities to store data without the need for any external driver. It is well suited for applications that need to store data over extended periods of time, such as in industrial and automotive applications. In addition, the combination of EEPROM and DRAM in one package increases the write speed of the device, as well as its overall density.

The MT28F004B3VG-8TETTR memory is available in four different sizes of 16Mb, 32Mb, 64Mb and 128Mb. These memories are organized in a 256K x 64 configuration, which allows users to read or write up to 64 bytes of data in a single access. These memories also support a range of read and write speeds, allowing them to be easily customized to specific application requirements.

One of the main features of the MT28F004B3VG-8TETTR memory is its ability to store data reliably over extreme temperature ranges. This is achieved through the device\'s charge trapping capability, which utilizes a specialized FET structure that is able to trap charge in the silicon layer and maintain it even at very low temperatures. This feature is especially important for industrial and automotive applications that may be subjected to extreme cold or hot temperatures for long periods of time.

In addition to its charge trapping capability, the MT28F004B3VG-8TETTR also employs a read-while-write operation. This allows the device to read and write simultaneously, allowing the device to maintain its write speed while the data is being read. This feature is especially useful in industrial and automotive applications, where the data must be constantly updated while the device is in operation.

The MT28F004B3VG-8TETTR, with its advanced TR technology, is optimal for applications such as data logging, machine control, and reliable storage of data over long periods of time. This type of memory is also ideal for automotive applications, where temperatures can rapidly change from extreme hot to extreme cold. Its combination of EEPROM and DRAM memory types and its ability to store data reliably over a wide temperature range make it an ideal choice for embedded systems and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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