Allicdata Part #: | MT28F004B5VP-8T-ND |
Manufacturer Part#: |
MT28F004B5VP-8 T |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 4M PARALLEL 40TSOP I |
More Detail: | FLASH - NOR Memory IC 4Mb (512K x 8) Parallel 80n... |
DataSheet: | MT28F004B5VP-8 T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | 80ns |
Access Time: | 80ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 40-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 40-TSOP I |
Base Part Number: | MT28F004B5 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Today the world of technology is growing and the need for efficient and reliable memories is increasing. The MT28F004B5VP-8 T is a 4 megabyte flash memory designed to meet these needs. The memory features increased and super-fast write cycles and is suitable for embedded applications.
The MT28F004B5VP-8 T belongs to a new generation of nonvolatile flash memories that allow members of the user community to leverage the most advanced technologies available to them. The combination of speed and power makes it a good choice for embedded systems that need to process data quickly and reliably. It also delivers enhanced performance over traditional NOR and NAND flash memory technologies.
The core feature of the MT28F004B5VP-8 T is its Super-Fast High-Speed Write Cycle (HSWC). This feature increases write performance with no additional power consumption and minimal heat output. The HSWC also makes the chip extremely efficient in applications that require frequent transactions and data transfers.
The memory features a low-power, low-voltage core that can operate in most application environments. It has an efficient point-programmable architecture, which eliminates the need for separate program and erase circuitry while allowing a high degree of flexibility. The combined levels of flexibility and efficiency make it a good choice for memory-intensive applications.
The memory also offers endurance and reliability features that are ideal for mission critical and embedded applications. The chip’s advanced End-of-Write (EOW) detection helps increase the lifetime of the chip by detecting write errors during runtime. It also supports an optional ECC algorithm that increases the security of stored data.
The MT28F004B5VP-8 T is easy to design and use due to its compact and easy-to-configure package. The chip’s 40-ball FBGA package fits into tight spaces and provides maximum flexibility. Other features include an integrated voltage regulator, controlled slew rate, external data control, and write-protect options.
The memory chip is ideal for a wide range of applications. Examples include industrial, automotive, consumer electronics, optical storage, and networked systems. This chip is ideal for large-scale applications that require high write speeds, maximum reliability, and a large storage capacity.
The MT28F004B5VP-8 T has revolutionized memory technology, thanks to its high write speeds and superior performance. It is a reliable and efficient memory chip that is ideal for embedded applications. With its combination of power, speed, and reliability, the MT28F004B5VP-8 T is well suited for any memory related application.
The specific data is subject to PDF, and the above content is for reference
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