MT28F008B3VG-9 B TR Allicdata Electronics
Allicdata Part #:

MT28F008B3VG-9BTR-ND

Manufacturer Part#:

MT28F008B3VG-9 B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 8M PARALLEL 40TSOP I
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8) Parallel 90ns ...
DataSheet: MT28F008B3VG-9 B TR datasheetMT28F008B3VG-9 B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 40-TSOP I
Base Part Number: MT28F008B3
Description

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Memory is an essential component for our technology-driven life. MT28F008B3VG-9 B TR memory is no exception. It is widely used in many fields due to its remarkable performance. This article provides a detailed overview of the application fields and working principle of MT28F008B3VG-9 B TR memory.

One of the most common applications of MT28F008B3VG-9 B TR memory is in the storage of data. It is featured with 8 megabyte with a device-level protection feature of software datapreservation. This makes it a great choice for storing large amount of data with utmost security. Furthermore, due to its high speed and low power consumption, it is also utilized in the fields of video game consoles, digital cameras, and portable players. In such areas, it performs exceptionally well by quick and reliable data storage with no need of extra power.

Another common use of MT28F008B3VG-9 B TR memory is in external memory devices. This type of memory is designed to offer fast speed, large capacity, and highly efficient data organization. As such, it is especially applicable for digital media devices such as smartphones, laptops, and tablets. It operates in high-speed mode for transfers of large files, providing users with a smooth experience when accessing their files.

The working principle of MT28F008B3VG-9 B TR memory lies in its hardware architecture. It consists of a base memory array formed by multiple memory cells. These cells are capable of storing one or more bytes of data, depending on the configuration. This array is then connected to other parts such as input/output lines, control logic, and peripherals. Through these components, the memory can access and store data as instructed.

MT28F008B3VG-9 B TR memory integrates state-of-the-art technologies such as advanced error correction and bad-block management features. These features are designed to protect stored data by quickly detecting and correcting erroneous values. Additional features of the memory include low power consumption and soft power-on reset function. This allows the memory to be used in areas where it is not possible to employ external power supplies.

In conclusion, MT28F008B3VG-9 B TR memory provides a versatile and reliable solution for many application fields. Its high performance, coupled with advanced features, makes it an excellent choice for digital media, storage devices, and other applications. It also boasts a high rate of data read/write, low power consumption, and a robust architecture that allows reliable data storage.

The specific data is subject to PDF, and the above content is for reference

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