Allicdata Part #: | MT29C2DBGM-DCTR-ND |
Manufacturer Part#: |
MT29C2DBGM-DC TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | MASSFLASH/LPDDR2 8G |
More Detail: | Memory IC |
DataSheet: | MT29C2DBGM-DC TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
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Memory is a core component in many electronic and computing systems. It stores program instructions and data. One of the most important types of memory is Flash Memory, which is often used for data storage due to its low cost, small size and high reliability. One of the most widely used Flash Memory devices is the MT29C2DBGM-DC TR. This device is used in a variety of applications such as consumer electronic devices, automotive systems, medical devices and many other embedded systems.
The MT29C2DBGM-DC TR is a single-chip NAND Flash Memory IC with a storage capacity of 16 gigabits (2GB). Its main features include a target access time of 25μs, a read/write speed of up to 150Mb/s, and an interface type of SLC NAND. It is also capable of operating over a wide range of temperatures and employs data-protection measures such as error correcting codes, wear-leveling, and bad block management. Additionally, it supports multi-level cells, making it ideal for applications that require high densities of data storage.
In terms of its application field, the MT29C2DBGM-DC TR can be used for many types of data storage, such as audio, video, data logging, and code storage. It is also often used in embedded systems due its long-term reliability and ability to store large amounts of data. Furthermore, the device can be used in consumer electronic devices, automotive systems, medical devices, and other computer systems.
In addition to its application areas, the MT29C2DBGM-DC TR also has unique working principles. Firstly, it has an erase-before-program operation that allows only valid data to be stored in the device, which prevents overwriting of existing data. Secondly, it has an efficient error-correcting code system that helps improve the stability and reliability of the data stored in the device. Finally, it has a wear-leveling algorithm that helps increase the total number of erase cycles available. All of these measures contribute to the device\'s long-term reliability and overall performance.
In conclusion, the MT29C2DBGM-DC TR is a versatile single-chip NAND Flash Memory IC. It is used for a variety of applications, including data storage, embedded systems, consumer electronic devices, automotive systems, and medical devices. It also has unique working principles such as an erase-before-program operation, an efficient error-correcting code system, and a wear-leveling algorithm. These features help ensure that the device has long-term reliability and can withstand any unexpected events.
The specific data is subject to PDF, and the above content is for reference
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MT29F1G08ABBFAH4-ITE:F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F2G01ABAGDSF-IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI 16SOPFLAS... |
MT29F2G08ABAEAH4-IT:E | Micron Techn... | -- | 3476 | IC FLASH 2G PARALLEL 63VF... |
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MT29F4G08ABAEAWP-IT:E TR | Micron Techn... | 3.88 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F64G08AFAAAWP-ITZ:A TR | Micron Techn... | 40.25 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
EPD5955-22-MT29C1693L016 | TE Connectiv... | 1.09 $ | 1000 | 55A CABLE/SINGLE WALLCond... |
MT29F2G08AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G16ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
MT29F16G08MAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
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