MT29F8G08ABACAWP-IT:C TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	8Gb (1G x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP
Base Part Number:	MT29F8G08

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What is MT29F8G08ABACAWP-IT:C TR Memory?

MT29F8G08ABACAWP-IT:C TR is a type of synchronous dynamic random access memory (SDRAM) built for mobile and industrial applications. It is designed to provide high-level performance with low power consumption. It is a stacked structure based on a NAND Flash memory that features two essential features: a variable data rate and a double-layer cell (DLC) design. The variable data rate enables the memory to operate at a higher data rate while the DLC design offers a uniform and reliable write performance at the highest speed without generating errors.

Application Field of MT29F8G08ABACAWP-IT:C TR Memory

MT29F8G08ABACAWP-IT:C TR memory is ideal for a wide range of applications in mobile devices, such as digital cameras, camcorders, as well as industrial applications such as artificial intelligence (AI), imaging, automotive, and industrial automation. It has a wide range of applications due to its efficiency, reliability, and performance, as well as its low power consumption.

Working Principle of MT29F8G08ABACAWP-IT:C TR Memory

The working principle of MT29F8G08ABACAWP-IT:C TR memory is based on the two essential features of its design – the variable data rate and the DLC. The variable data rate feature of the memory enables it to run at high data rates while consuming a minimal amount of power. This feature also ensures that data can be read and written quickly and efficiently. The DLC design ensures that data can be written accurately and reliably at the highest speed without generating errors. The memory also has an interface that allows it to connect to the system, which makes it easy to use and manage. The memory utilizes a wide range of technologies, such as self-refresh cycles and read/write burst modes, to ensure that it can be safely and reliably used in a variety of applications.

Conclusion

MT29F8G08ABACAWP-IT:C TR memory is an effective memory solution for mobile and industrial applications. Its design features enable it to run at high data rates while consuming minimal power, and its wide range of technologies allow it to be used efficiently and safely in a variety of applications. Its reliability and performance make it ideal for a wide range of applications.

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