MT29F4G08ABAEAWP-IT:E TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	4Gb (512M x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP
Base Part Number:	MT29F4G08

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Introduction to Memory MT29F4G08ABAEAWP-IT:E TRHigh-performance server and storage applications, industrial computing platforms, and embedded system designs use memory products such as NAND flash memory to perform large data storage and retrieval tasks. MT29F4G08ABAEAWP-IT:E TR is a NAND flash memory manufactured by Micron Technology and is part of the company’s MT29F4G08ABAEAWP storage device family.Application field of MT29F4G08ABAEAWP-IT:E TRMT29F4G08ABAEAWP-IT:E TR is an 8GB NAND flash memory with an interface based on the ONFI 4.0 specification. It is ideal for server, storage and industrial computing applications. The device operates at a clock speed of 50MHz and has a page size of 16KB. It also features ECC correction, a program/erase speed of 150μs, and a read speed of 2.5μs.MT29F4G08ABAEAWP-IT:E TR features either a 29F912 or a 29FE12 controller. The 29F912 controller is designed for advanced system designs with strong error-correction capabilities. It is equipped with an 8-bit error-correcting code (ECC) engine for excellent data integrity. The 29FE12 controller is a cost-effective solution for high-performance system designs. It comes with a 4-bit ECC engine that helps maintain data integrity.Advantages of MT29F4G08ABAEAWP-IT:E TRThe MT29F4G08ABAEAWP-IT:E TR offers a number of advantages. It has a low operating voltage of 1.8v, which means that it consumes less power than traditional NAND flash devices. The device also provides fast program/erase speeds and read/write speeds. In addition, it supports a variety of clock speeds, allowing for compatibility with a wide range of system designs.Working Principle of MT29F4G08ABAEAWP-IT:E TRThe MT29F4G08ABAEAWP-IT:E TR is a NAND flash device that uses a two-dimensional (2D) array of cells to store data. Each cell consists of two transistors, which are used to switch information into and out of the array. Data is stored in these cells in the form of electrons that can migrate between the two transistors. When a page of data is written to the device, it is broken down into 8-bit strings, or “words” which are then written to consecutive cells in the array. To write data, the transistors in the cells are switched in accordance with the word. The device then monitors the memory cells and records any changes made. When data is read from the device, the device reads the cells and decodes the contents. The device then transforms the contents into a digital format, which can then be processed by the system. The device can store 8 bits of data in each cell.The MT29F4G08ABAEAWP-IT:E TR also uses advanced error-correction techniques to identify and correct errors that occur during data transmission. The integrated ECC engine monitors the data and corrects errors that are detected.ConclusionMT29F4G08ABAEAWP-IT:E TR is a powerful NAND flash memory that is ideal for high-performance applications in the server and storage, industrial computing, and embedded system markets. The device operates at a clock speed of 50MHz and features ECC, a program/erase speed of 150μs, and a read speed of 2.5μs. It is equipped with either a 29F912 or a 29FE12 controller and has a low voltage requirement of 1.8v. The device uses a two-dimensional (2D) array of cells to store data and also incorporates advanced error-correction techniques to ensure data integrity.

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