MT29F4G08ABCHC:C TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	4Gb (512M x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	63-VFBGA
Supplier Device Package:	63-VFBGA
Base Part Number:	MT29F4G08

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Introduction: MT29F4G08ABCHC:C TR

MT29F4G08ABCHC:C TR is a 4Gb (512Mb x 8) NAND Flash Memory IC from Micron Technology that functions as a non-volatile, electrically erasable, programmable memory. It has the capability to store data even when the system is turned off. This device is constructed using a high-density, low-voltage, and small-geometry NAND Flash process offering a cost-effective and power-efficient solution for a broad range of mobile, networking, and consumer applications.

Applications

The 4Gb MT29F4G08ABCHC:C TR offer high-density storage and is ideal for a variety of applications that require large amounts of code, graphics, or multimedia information. This includes a wide range of mobile devices such as smartphones and tablets, set-top boxes and digital TVs, and gaming consoles. In addition, this memory device can also be used in digital multimedia, automotive infotainment, and industrial control and automation systems.

Working Principle

The MT29F4G08ABCHC:C TR NAND Flash memory stores data on 2 bits per cell and operates on a voltage range of 1.65V-3.6V. This device is organized into blocks with 1,024 pages per block. Each page contains 4Kbytes of data that can be read and programmed to using a page program command.The memory device also employs an array of error-correction methods such as Advanced ECC (Error Correction Codes), improved ECC sensitivity and data redundancy to ensure data integrity and accuracy. The device features a low-power AutoRefresh Mode that reduces the active power of the device during standby modes. It also offers an effective data block management system with Bad Blocks, Erase Counts, Wear Leveling indication, and Read Retry.

Conclusion

The MT29F4G08ABCHC:C TR 4Gb NAND Flash Memory offers high-density, low-voltage storage capabilities and is ideal for a variety of applications that require large amounts of code, graphics, or multimedia information. Its advanced error-correction methods and low-power AutoRefresh Mode ensure data integrity and accuracy while reducing power consumption. With its wide range of applications and impressive performance capabilities, the MT29F4G08ABCHC:C TR is a great choice for those looking for a reliable and cost-effective solution for their memory needs.

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