Allicdata Part #: | 557-1371-2-ND |
Manufacturer Part#: |
MT29F8G08AAAWP:A TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 8G PARALLEL 48TSOP I |
More Detail: | FLASH - NAND Memory IC 8Gb (1G x 8) Parallel 48-... |
DataSheet: | MT29F8G08AAAWP:A TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 8Gb (1G x 8) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP I |
Base Part Number: | MT29F8G08 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
MT29F8G08AAAWP:A TR is a multi-level floating-gate nonvolatile memory technology that leverages advanced silicon process and nonvolatile memory features to offer a long life-cycle and a high level of security. It can store multi-level data, such as 2-bit or 3-bit data, and can be used in several applications, such as secure disk storage, secure computing, secure storage, and secure mobile devices.
Application Fields
MT29F8G08AAAWP:A TR can be used for various applications that require high security. One of the most common applications is in the field of secure storage. It can be used for data storage and encryption, including personal and business data, as well as sensitive information such as credit card numbers and financial reports. It is also used for authentication, where it can be used to create secure access to stored information. Other applications include disk storage, secure computing, secure communications, and secure mobile devices.
Working Principle
MT29F8G08AAAWP:A TR works based on the principle of floating-gate nonvolatile memory (FG-NVM). This type of memory is similar to the flash memory used in many electronic devices, but instead of having a single bit of data stored in each memory cell, the memory cell can store multiple levels of data.
When the memory cell is written to, a small amount of charge is placed on the gate. This changes the threshold voltage of the memory cell, allowing for different levels of data to be stored in the memory cell, depending on the amount of charge placed on the gate. This allows for data to be stored at multiple levels, allowing more data to be stored in a given area.
When the memory cell is read from, the gate charge is counted and the appropriate data is retrieved from the memory cell. This allows for data to be stored securely, as the memory cell can only store data that has been written to it, making it difficult to tamper with or access the stored data.
Conclusion
MT29F8G08AAAWP:A TR is a multi-level floating-gate nonvolatile memory technology that offers a long life-cycle and a high level of security. It is used in several applications, such as secure disk storage, secure computing, secure communications, and secure mobile devices. It works based on the principle of floating-gate nonvolatile memory, which allows for data to be stored securely in multiple levels.
The specific data is subject to PDF, and the above content is for reference
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MT29F2G08AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
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MT29F4G16ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
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MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
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