Allicdata Part #: | 557-1675-2-ND |
Manufacturer Part#: |
MT29F64G08AFAAAWP-ITZ:A TR |
Price: | $ 40.25 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64G PARALLEL 48TSOP I |
More Detail: | FLASH - NAND Memory IC 64Gb (8G x 8) Parallel 48... |
DataSheet: | MT29F64G08AFAAAWP-ITZ:A TR Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 36.59040 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 64Gb (8G x 8) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP I |
Base Part Number: | MT29F64G08 |
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Memory is an important component of any computer system, and MT29F64G08AFAAAWP-ITZ is a well-known memory device of Micron Technology Inc. This device is an 8-gigabit (1 Gigabit = 1,000,000,000 bytes) Large Block Toggle Double Data-Rate NAND Multi-Chip Package (MCP) with a 72-bits wide output data interface. It consists of two independent storage dies, and each die has two visible address and data bus lines so that there are four external data I/O buses.
MT29F64G08AFAAAWP-ITZ can be used for various applications. It can be used as a main memory for general-purpose computers and embedded systems, as volatile buffer memory for digital cameras and other imaging systems, as a large RAM cache for disk controllers, and as a backup memory or system-critical data storage for embedded systems such as automotive control systems, navigation systems and industrial control systems. Moreover, it is also used in data storage solutions such as wireless applications, gaming and navigation systems, and automotive infotainment systems.
Its working principle is based on the architecture of NAND flash memory. The device comprises two independent memory dice that each contain two independent controllers and eight parallel NAND strings. Each die contains four NAND strings. The architecture is designed to provide high-performance data transfers, large storage capacities and low-latency access to stored data. When used as a main memory, MT29F64G08AFAAAWP-ITZ can be configured to operate in asynchronous or synchronous mode. In asynchronous mode, each controller handles all requests in an arbitrary order. In synchronous mode, each controller handles one request at a time. Data is stored in memory cells that are connected to NAND strings.
When storing data, NAND strings are programmed in blocks. The data is written to the memory cells in each NAND string on the device. The data is stored in the form of bits and bytes and can be read back by the controller. The controller compares the data stored in the cells to the stored bits and bytes, and if they match, it marks the block as valid and ready to use. The controller then triggers a write command and stores the data on the NAND string.
When reading data, the controller sends a command to the NAND strings and receives a series of bits and bytes. The controller then converts the bits and bytes into usable data. The data can then be used by the system in various ways. For example, it can be used as memory for a system or used as a cache for disk controllers.
MT29F64G08AFAAAWP-ITZ is a powerful and reliable device for various applications. It is suitable for various memory needs, and is capable of providing high performance and large storage capacities. It is also highly reliable and can be used in various embedded systems and digital devices. It is a versatile device that can be used in many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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MT29F64G08AFAAAWP-ITZ:A TR | Micron Techn... | 40.25 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
EPD5955-22-MT29C1693L016 | TE Connectiv... | 1.09 $ | 1000 | 55A CABLE/SINGLE WALLCond... |
MT29F2G08AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
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MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
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