MT29F2G16AADWP-ET:D TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	2Gb (128M x 16)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP I
Base Part Number:	MT29F2G16

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MT29F2G16AADWP-ET:D TR Memory application field and working principle

The MT29F2G16AADWP-ET:D TR memory is a high-speed synchronous dynamic random access memory (SDRAM). It is mainly used for industrial and automotive applications. This SDRAM has a broad interface range, allowing it to be used in a variety of applications, such as automotive systems, industrial systems, embedded systems and consumer electronics.MT29F2G16AADWP-ET:D TR memory is a DDR2 SDRAM. It is based on the 64M×8bits architecture and designed to achieve a high memory density. The SDRAM is organized in eight banks of eight 1024-bit pages and supports four independent auto-refresh cycles.In order to operate properly, the MT29F2G16AADWP-ET:D TR memory uses a variety of signals. The main signal of the device is the address bus. The address bus carries the address signal for each device. Along with the address bus, there is a data bus that carries the data signal. The control signals CKE, CS and RAS are also used.The CKE signal is an output signal used to activate the memory. When the CKE signal is low, the device is in standby mode. When the CKE signal is high, the device is in active mode and can receive addresses and transfer data.The CS signal is an input signal used to select a memory device. The CS signal goes low to activate the selected memory device. When the CS signal goes high, the device is deselected and is in standby mode.The RAS signal is an input signal used to initialize the memory. The RAS signal goes low to activate the memory banks and pre-charge the address and data. Once the initialization process is complete, the RAS signal goes high to deselect the memory banks.The device also uses two clock signals: the CK and DQS. The CK signal is an output signal used to synchronize the internal operations of the device. The DQS signal is an input signal used to synchronize the data bus.In addition to the main signals, the device also has several output signals. The most important are the Data Ready and Write Ready signals. The Data Ready signal indicates that the data is ready to be transferred. The Write Ready signal indicates that the device is ready to accept write data.When the device is operating in read/write mode, the output data will be latched on the rising edge of the CK. The address and data should be valid at least one clock cycle before the rising edge of the CK.The MT29F2G16AADWP-ET:D TR memory can be used in automotive, industrial and embedded applications. It is an ideal choice for memory intensive applications, such as image processing and audio/video playback. The device is capable of handling high-performance data transfer rates, making it suitable for a wide range of applications.

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