MT29E128G08CECABJ1-10Z:A TR

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Memory is essential to all forms of computing, from phones and other computers to larger applications. It is used to store information and ensure that it can be accessed easily. The type of memory used depends on the application and the performance requirements. One type of memory that is used in a variety of applications is MT29E128G08CECABJ1-10Z:A TR memory.

Overview

MT29E128G08CECABJ1-10Z:A TR is a type of NAND flash memory with a 128GB capacity. It is manufactured by Toshiba Memory, a subsidiary of the Toshiba Group and is designed for industrial and consumer applications. The device has a 10-die architecture with a power supply range of 1.8v to 3.3v for operation. It is available in a variety of packaging options, including an 8-ball BGA, but the 10Z:A TR version is the most common.

The MT29E128G08CECABJ1-10Z:A TR is rated for 1,500 cycles and can sustain up to 300MB per second sequential read and write speeds. It has an ECC (Error Correction Code) of 72 bits per 1KB. The device also has Enhanced Low Density Parity Check (LDPC) error correction capability to protect against data corruption. It is rated for 3 years at 55°C and a maximum operating temperature of 85°C.

Applications

The MT29E128G08CECABJ1-10Z:A TR Flash Memory is commonly used in embedded applications, such as industrial automation, medical and aerospace products. It is also used in consumer applications, such as digital audio players, digital cameras and camcorders. The device is fast enough for use in embedded applications and can store large amounts of data which makes it ideal for embedded applications.

The MT29E128G08CECABJ1-10Z:A TR is also used as a boot device in some embedded systems. The device is used to store the operating system and application code, and is much faster than traditional magnetic disc-based storage. The device can also be used in automotive applications, particularly in safety systems such as airbags.

The device is designed to be used in applications that require fast data access with minimal power consumption. It also has a low latency, which is important for applications that require fast data retrieval. The device has a high endurance rating, which is useful for applications that need to store large amounts of data for long periods of time.

Working Principle

The MT29E128G08CECABJ1-10Z:A TR is a type of NAND flash memory. NAND flash is a type of non-volatile memory, which means that it can store data even when power is not present. In NAND flash memory, data is stored in floating-gate transistors. Unlike regular transistors, these transistors are able to store an electrical charge, which is what allows them to store data.

The MT29E128G08CECABJ1-10Z:A TR is a flash memory device, which means that it operates by using the principle of electrical charge. When the device is powered on, an electrical charge is placed on the floating gate transistors. The electrical charge is used to store data in the form of a binary code, which can be read and written by the device.

The data is organized in blocks and pages, which are the smallest units of storage. The data is organized into blocks, which contain a certain number of pages. Each page contains a certain amount of data, which is usually between 512 and 4096 bytes. The device also contains an Error Correction Code, which is used to prevent data corruption and ensure data accuracy.

The MT29E128G08CECABJ1-10Z:A TR is a fast and reliable device that is suitable for a variety of applications. It provides a high speed and low power consumption, making it suitable for embedded applications. It has a high endurance rating, making it ideal for applications that require large amounts of data storage. The device also has an ECC, which provides data integrity and prevents data corruption.

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