| Allicdata Part #: | MT29E1HT08EMHBBJ4-3:BTR-ND |
| Manufacturer Part#: |
MT29E1HT08EMHBBJ4-3:B TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 1.5T PARALLEL 132VBGA |
| More Detail: | FLASH - NAND Memory IC 1.5Tb (192G x 8) Parallel |
| DataSheet: | MT29E1HT08EMHBBJ4-3:B TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 1.5Tb (192G x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.5 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
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MT29E1HT08EMHBBJ4-3:B TR Application Field and Working Principle
Memory is an important storage device for computer systems. MT29E1HT08EMHBBJ4-3:B TR is a type of memory. It is a 4 Gb doubl-data-rate (DDR) 3 module with a Serial Presence Detect package and is a product of Micron Technology. It offers enhanced data transfer performance in a smaller and thinner form factor, making it ideal for embedded systems.
Application Field
MT29E1HT08EMHBBJ4-3:B TR is mainly used in embedded systems. It offers high data transfer rates and low power consumption, making it suitable for use in laptops, tablets, and other portable devices. It is also used in memory-intensive applications such as graphics processing and video decode/encoding.
MT29E1HT08EMHBBJ4-3:B TR is also suitable for applications needing reliable and continuous memory performance, such as automated control systems, security systems, and financial database systems. It is also ideal for use in areas needing high-endurance storage such as automotive systems, industrial automation systems, and medical imaging systems.
Working Principle
MT29E1HT08EMHBBJ4-3:B TR utilizes DDR3 technology to transmit data. DDR3 is a type of Dynamic Random Access Memory (DRAM) that is capable of transferring data at faster speeds and with lower power consumption compared to its predecessors.
When data is written to a DDR3 memory module, the module first senses the signal, which causes a signal to travel down the lines of memory cells. When the signal reaches the other end of the line, it triggers the data write/read process. Each signal then moves consecutively to each cell in the line.
MT29E1HT08EMHBBJ4-3:B TR also uses Serial Presence Detect (SPD) technology, which is a system used to determine the type, speed, voltage and timing parameters of the memory module used. This enables the system to utilize the memory module to its fullest potential.
Benefits of Using MT29E1HT08EMHBBJ4-3:B TR
MT29E1HT08EMHBBJ4-3:B TR offers a number of benefits. It has a smaller form factor compared to other memory modules, so it takes up less space in the system. It also features higher data transfer rates, which makes it more efficient at transferring large amounts of data quickly. Plus, it has low power consumption, which helps reduce system energy consumption and improve system performance.
MT29E1HT08EMHBBJ4-3:B TR is also designed to be reliable and durable, which makes it ideal for use in systems that require uninterrupted operations, such as medical imaging systems and financial database systems. Lastly, its SPD technology ensures the memory module can be optimized for maximum performance, making it the ideal choice for embedded systems.
The specific data is subject to PDF, and the above content is for reference
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MT29E1HT08EMHBBJ4-3:B TR Datasheet/PDF