MT29F256G08CECCBH6-6R:C TR

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Memory is a primary source of information for any computing device or system be it the computer of today or the embedded systems in IoT based applications. Among them, Flash memory stands out for itsrewriteable,high-capacity,non-volatile data storage, and low power consumption components. MT29F256G08CECCBH6-6R:C TR is a product from Micron’s Flash family, which is a 256-Gb NAND Flash product.

The market for Flash memory continues to rapidly evolve. Traditional Flash-based products have seen incresing demand since the last decade because of their key features. MT29F256G08CECCBH6-6R:C TR product is the latest innovation in Flash memory which offers the outstanding features of traditional Flash products along with increased endurance and sustained cost-effectiveness.

The key application areas of MT29F256G08CECCBH6-6R:C TR are automotive, consumer electronics, mobile and industrial applications. This product can be used in variety of consumer applications ranging from digital cameras and external storage devices to solid-state drives(SSD), and USB sticks. It’s highly durable and reliable for automobiles that require long lifetime for components. Similarly, in Industrial applications, it is reliable for storing critical data with minimized downtime, increased efficiency and cost savings.

MT29F256G08CECCBH6-6R:C TR is a 128 Gb multi-level cells (MLC) Technology Memory. It enables asynchronous design with program and erase voltages of 1V. It is built in such a way that it can sustain extended erase cycles and isolate memories from adjacent cells. The MT29F256G08CECCBH6-6R:C TR has a minimum of 8,000 program/erase cycles. It is a 3.3V, 4-bank device, with an access latency of ~25ns.

The MT29F256G08CECCBH6-6R:C TR includes a commanding interface (command processor) to enhance system performance, simplify system architecture, and reduce pin count. The command processor features a simple instruction set, which enables systems to perform operations such as read, program, erase, and suspend/resume. This device also includes a built-in soft error correction handle errors, which is important for consumer applications.

MT29F256G08CECCBH6-6R:C TR’s state-of-the-art architecture and advanced algorithms increase the read speed compared to previous generations Flash and reduce power consumption. The device also supports Flexible Data Rate (FDR) for high-speed reading. In addition, MT29F256G08CECCBH6-6R:C TR’s Auto-Leveling (AL) algorithms automatically detect and compensate for cell-level non-uniformity, resulting in higher flash read performance and improved bit error rate (BER).

MT29F256G08CECCBH6-6R:C TR provides a strong security feature set, including a secure erase, secure identity and access control. These features protect data integrity, secure the device against malicious attacks, and limit access to the user memory. The MT29F256G08CECCBH6-6R:C TR also supports advanced data encoding techniques to ensure data integrity.

In summary, MT29F256G08CECCBH6-6R:C TR is a reliable high-capacity Flash memory ideal for a variety of consumer, automotive and industrial applications. Its superior performance, advanced algorithm and secure erase features make it an ideal choice for today’s computing needs. Its wide range of application fields and strong feature set makes it suitable for a variety of different application scenarios.

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