MT29F2T08CUHBBM4-3R:B TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	2Tb (256G x 8)
Clock Frequency:	333MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.5 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)

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Memory: MT29F2T08CUHBBM4-3R:B TR

Memory technology is an important part of today’s computing. Within the memory industry, one of the leading products is the MT29F2T08CUHBBM4-3R:B TR from Micron Semiconductor. This product is a high-reliability 2 Tb, 2-bit MLC NAND flash memory module, specifically designed for industrial applications.

Application Field

MT29F2T08CUHBBM4-3R:B TR’s specialty is its combination of small scale, high performance, and low power consumption. It is suitable for applications ranging from surveillance system to industrial Internet of Things (IoT) and Industrial 4.0 applications. This Multi-Chip-Package (MCP) flash module is optimized for high-speed performance and high reliability, making it the ideal choice for areas requiring rapid data transfer and large storage space.The flash module is equipped with an 8K page architecture, making it perfect for storing large amounts of data, such as multimedia and high-efficiency code. Its advanced error correction algorithm (ECC) and strong wear-leveling algorithms protect stored data and enable up to three times the read performance compared to the standard single chip.

Working Principle

MT29F2T08CUHBBM4-3R:B TR applies Micron\'s unique BiCS FLASH (3D NAND) technology. This module\'s three-dimensional structure enables more cells to be stacked and connected vertically in the same area, resulting in larger storage space and faster access speeds compared to single-level cell (SLC) NAND Flash technology. By stacking up to 64 cell layers, the module can store up to a maximum of 2 Tb.The flash memory module uses a two-bit Multi-Level Cell (MLC), which stores a two-bit code per cell. This means that two bits of data can be stored in a single cell, which, in turn, increases the total amount of data that can be stored on the memory card. The module also uses advanced error correction algorithms to ensure data integrity and long-term stability.

Conclusion

The MT29F2T08CUHBBM4-3R:B TR flash memory module is an efficient, high-performance memory storage solution. Its combination of small size, low power consumption, large storage capacity, high speed and long reliability make it a perfect choice for applications such as surveillance systems and industrial IoT and Industrial 4.0. Thanks to the advanced error correction algorithms and efficient Multi-Level Cell architecture, the module can store up to 2 Tb of data with high speed, stability, and integrity.

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