MT29F4G08ABAEAWP-IT:E Allicdata Electronics
Allicdata Part #:

MT29F4G08ABAEAWP-IT:E-ND

Manufacturer Part#:

MT29F4G08ABAEAWP-IT:E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4G PARALLEL 48TSOP
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 4...
DataSheet: MT29F4G08ABAEAWP-IT:E datasheetMT29F4G08ABAEAWP-IT:E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: MT29F4G08
Description

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Memory is an essential component in any computer system. MT29F4G08ABAEAWP-IT:E is a type of non-volatile memory, or NVM, which has a special application in today’s consumer electronics and industrial electronics. Specifically, it is a multi-level cell (MLC) NAND flash memory device, and as such is used in a wide variety of consumer and industrial applications. In this article, we will discuss the application field and working principle of MT29F4G08ABAEAWP-IT:E.

The MT29F4G08ABAEAWP-IT:E is a 4Gb 3V MLC NAND Flash memory with a dedicated on-die ECC engine. This ECC engine is designed to offer superior reliability and data integrity performance. The onboard ECC engine allows the device to detect and automatically correct errors, providing significant data integrity improvements. In addition, the device has a die-select (DS) pin, which provides manufacturers with additional flexibility in die selection and ensuring high performance and reliability.

The MT29F4G08ABAEAWP-IT:E is ideally suited for consumer electronics applications such as digital cameras, digital camcorders, digital audio players and other portable devices. The device offers very high write performance, which makes it ideal for devices that require high levels of data throughput. It is also a popular choice for embedded systems, including data-acquisition systems, household appliances and medical devices. In particular, the device provides exceptional power-management capabilities, allowing devices to power down during idle periods, thus preserving battery life.

The working principle of the MT29F4G08ABAEAWP-IT:E is based on the NAND cell architecture. A NAND cell consists of two transistors and two floating-gate capacitors, which store bits in the form of electrical charge. When a current is passed through the cell, the stored charge will cause a voltage level change in the output. By analyzing the output signal, the device can read and write data from the cell.

The device also incorporates a number of advanced NAND Flash technologies, such as on-die ECC and advanced wear-leveling. On-die ECC ensures that errors are detected before they cause data loss, while the advanced wear-leveling algorithms ensure even wear across the entire array, thus providing improved reliability and performance.

The MT29F4G08ABAEAWP-IT:E is an advanced NAND Flash memory device that is designed to be suitable for a variety of consumer and industrial applications. Its on-die ECC engine and other features make it an excellent choice for applications that require high-reliability data storage. Additionally, its power-management capabilities provide improved battery life for portable devices.

The specific data is subject to PDF, and the above content is for reference

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