Allicdata Part #: | MT29F64G08AECABH1-10:A-ND |
Manufacturer Part#: |
MT29F64G08AECABH1-10:A |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64G PARALLEL 100VBGA |
More Detail: | FLASH - NAND Memory IC 64Gb (8G x 8) Parallel 100M... |
DataSheet: | MT29F64G08AECABH1-10:A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 64Gb (8G x 8) |
Clock Frequency: | 100MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-VBGA |
Supplier Device Package: | 100-VBGA (12x18) |
Base Part Number: | MT29F64G08 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technology is a critical component of modern computing systems, allowing for the efficient storage and retrieval of data. The MT29F64G08AECABH1-10 is one of the latest offerings in memory technology, designed to provide a high degree of performance and reliability. In this article, we will take a closer look at the MT29F64G08AECABH1-10\'s application field and working principle.
The MT29F64G08AECABH1-10 is designed for use in a variety of applications, including mobile devices, digital cameras, and other high-performance computing devices. It is also well-suited for industrial control systems and can be used in a variety of commercial applications, such as medical imaging and surveillance systems. The MT29F64G08AECABH1-10 features a unique combination of features that make it the ideal choice for many different types of computing systems.
The most important of these features is its innovative error correction system. This system is designed to detect and correct errors caused by background noise and other interference. The system is also capable of detecting and correcting errors that occur during the writing, reading, or storing of data. This ensures that any data stored on the chip remains intact and can be read with a high degree of accuracy.
The MT29F64G08AECABH1-10 also features a high-density, dual-channel Flash memory architecture. This means that the chip can store more data than a typical Flash memory chip, but still allow for access to its contents at the same high speeds as a single-channel Flash memory chip. This high-density structure also allows for much faster read/write times than traditional memory chips.
The MT29F64G08AECABH1-10 is also equipped with an advanced low power consumption design, which helps to conserve battery life in mobile applications. This feature allows the chip to remain active for a longer period of time before needing to be recharged. It also helps to reduce overall system power consumption, allowing for more efficient use of the device\'s battery.
In addition to its low power consumption, the MT29F64G08AECABH1-10 also features a number of advanced features. These include an enhanced wear-leveling algorithm, which allows the chip to maintain data integrity over long periods of time. This algorithm also prevents access to data that is more than a few years old. Additionally, the chip supports dynamic error correction and bad block management, which helps to ensure data consistency over time.
Finally, the MT29F64G08AECABH1-10 is designed with a number of safety features. This includes enhanced error checking and correction, as well as a variety of mechanisms to protect data from unauthorized access. These features ensure that data stored on the chip remains secure and can only be accessed by authorized personnel.
The MT29F64G08AECABH1-10 is a powerful and reliable memory solution, designed for a variety of different applications. Its innovative features allow for improved performance, reliability, and safety, giving users the confidence that their data is stored securely and can be retrieved with a high degree of accuracy. With its advanced features, the MT29F64G08AECABH1-10 is sure to be a popular choice for many years to come.
The specific data is subject to PDF, and the above content is for reference
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MT29F2G01ABAGDSF-IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI 16SOPFLAS... |
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MT29F2G08AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
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MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
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