| Allicdata Part #: | MT29F4G08ABAFAH4-AITES:F-ND |
| Manufacturer Part#: |
MT29F4G08ABAFAH4-AITES:F |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 4G PARALLEL FBGA |
| More Detail: | FLASH - NAND Memory IC 4Gb (512M x 8) Parallel |
| DataSheet: | MT29F4G08ABAFAH4-AITES:F Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 4Gb (512M x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
In the world of digital storage, memory is an invaluable tool. One of the most versatile and powerful types of memory available today is MT29F4G08ABAFAH4-AITES:F. In this article, we will discuss the application field and working principle of MT29F4G08ABAFAH4-AITES:F.
MT29F4G08ABAFAH4-AITES:F is a type of NAND flash memory that is commonly used in various electronic devices, such as smartphones, computers, camera, etc. It has an advantage over traditional hard disk drives, in that it has better performance, smaller size, and is more energy efficient. It is also more durable than traditional hard disk drives, meaning that you don\'t have to worry about data loss due to mechanical failures.
The application of MT29F4G08ABAFAH4-AITES:F depends on the needs of the device. For example, it could be used in an SSD to increase the read/write speed of a computer. Additionally, it can be used in cameras to store photos and videos. It can also be used in servers, where large volumes of data can be stored quickly and efficiently.
When it comes to the working principle of MT29F4G08ABAFAH4-AITES:F, there are several key components. The memory cell contains a transistor and a capacitor, which acts as the main storage unit. An address decoder reads the address and sends the data to the appropriate address. The control logic unit\'s job is to control the operation of the memory by sending various commands to the memory cells. Finally, the output buffers take the data from the memory cells and send it to the device.
In addition to the above components, there are several other components that are used in MT29F4G08ABAFAH4-AITES:F memory, such as the charge pump, edge detector, and data latches. They all work together to ensure that the memory is able to perform its functions efficiently and reliably. The charge pump is responsible for supplying the proper amount of current to the memory cell, while the edge detector is used to detect when the data has been stored in the memory cell.
The primary benefit of MT29F4G08ABAFAH4-AITES:F is that it can store large amounts of data at high speeds. Additionally, it can be used in a wide range of devices and applications, making it very versatile and cost-effective. Its small size also makes it very convenient to use.
In conclusion, MT29F4G08ABAFAH4-AITES:F is an incredibly versatile type of memory that is used in a variety of applications. It is capable of storing large amounts of data at high speeds, and is more durable, reliable, and energy efficient than traditional hard disk drives. Its components and working principle enable it to store and retrieve data quickly and efficiently. It is also very cost-effective, making it an ideal choice for a variety of applications and devices.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT29F512G08CUAAAC5:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 52... |
| MT29C1G12MAADAFAMD-6 IT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 130... |
| MT29F4G08ABAEAH4:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29C1G12MAACVAMD-5 E IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 130... |
| MT29PZZZ8D4WKFEW-18 W.6D4 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 72G SLC DDRMemor... |
| MT29F128G08AMCDBL1-6:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 16... |
| MT29F256G08CECCBH6-6R:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 16... |
| MT29F2T08CUHBBM4-3R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 333M... |
| MT29F512G08CKCBBH7-6C:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 16... |
| MT29F256G08EFEBBWP:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
| MT29F64G08ABEBBH6-12:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 83M... |
| MT29F8G01ADBFD12-AATES:F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G SPI TBGAFLASH... |
| MT29E1T208ECHBBJ4-3:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1.125T PARALLEL ... |
| MT29F4G08BABWP-ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
| MT29C1G12MAADAEAKC-6 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 107... |
| MT29F2G08ABBEAHC:E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F2G16ABBEAHC:E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F8G08ADADAH4-IT:D | Micron Techn... | -- | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F8G16ABBCAH4-IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F4G08ABAEAWP-IT:E | Micron Techn... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F128G08CECABH1-12Z:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 10... |
| MT29F256G08CJAAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
| MT29F128G08CEEDBJ4-12:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 83... |
| MT29F256G08CBCBBWP-10M:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
| MT29VZZZ7D7HQKWL-062 W.G7A | Micron Techn... | 0.0 $ | 1000 | ALL IN ONE MCP 280GMemory... |
| MT29F16G08ABCBBH1-12AIT:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 83M... |
| MT29F8G08FACWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
| MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
| MT29F1G08ABCHC:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29C1G12MAACYAML-5 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 153... |
| MT29F2G08ABBEAH4:E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F64G08AECABH1-10:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 100... |
| MT29F64G08CECCBH1-12IT:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 100... |
| MT29F1G16ABBDAHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29F4G16ABAEAH4:E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29F8G16ABACAH4:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F256G08CKCBBH2-10:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
| MT29F256G08AKEBBK7-12:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 83... |
| MT29F4G08ABAFAH4-AITES:F | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL FBGA... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
MT29F4G08ABAFAH4-AITES:F Datasheet/PDF