MT29F1G08ABCHC:C

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	1Gb (128M x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	63-VFBGA
Supplier Device Package:	63-VFBGA
Base Part Number:	MT29F1G08

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Introduction

MT29F1G08ABCHC:C is a high-density stackable monolithic memory chip developed by Toshiba. It offers high capacity and improved performance, making it ideal for a wide range of applications. As a member of the Toshiba DRAM family, the chip has many advantages, such as high-speed write and read capability, low power consumption and low cost. With these advantages, the MT29F1G08ABCHC:C is suitable for a variety of applications, such as data storage, computing, graphics and multimedia.

Application Field of MT29F1G08ABCHC:C

The MT29F1G08ABCHC:C is suitable for a variety of applications, such as data storage, computing, graphics and multimedia. One of the most common applications of the MT29F1G08ABCHC:C is data storage. It is able to provide high-speed, reliable and cost-effective storage solutions for servers, networks and digital appliances. The chip is able to read data quickly and store it for a long time. It can also be used for mobile storage devices, such as SD cards, digital cameras and cell phones.The MT29F1G08ABCHC:C can also be used for computing applications. It can be used for high-end gaming computers to increase speed, performance and graphical capabilities. It is also often used in embedded systems and multiprocessor systems.The MT29F1G08ABCHC:C is also suitable for graphics and multimedia applications. The chip can be used for video game consoles, high-definition televisions and other digital media devices. It is also used in GPS systems, medical imaging and other high-end applications.

Working principle of MT29F1G08ABCHC:C

The MT29F1G08ABCHC:C works on the principle of dynamic random access memory (DRAM). It consists of multiple storage cells which are arranged in a matrix. Each storage cell holds a bit of data. When a data bit is written, the cell is charged up. When it is read, the cell is discharged. The data is stored as a charge in the cell, so it must be refreshed periodically to maintain the data integrity.The MT29F1G08ABCHC:C is organized into sixteen banks of 64-megabits each. Each bank can be further divided into four columns and 2048 rows. The bank architecture of the chip allows for the fast read and write speeds that are necessary for high performance applications.

Conclusion

The MT29F1G08ABCHC:C is a high-density stackable monolithic memory chip developed by Toshiba. It offers many advantages over other DRAM chips, such as high-speed write and read capability, low power consumption and low cost. It is suitable for a variety of applications, such as data storage, computing, graphics and multimedia. The chip operates on the principle of dynamic random access memory (DRAM) and is organized into sixteen banks of 64-megabits each. The bank architecture of the chip allows for the fast read and write speeds that are necessary for high performance applications.

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