| Allicdata Part #: | MT29PZZZ8D4WKFEW-18W.6D4-ND |
| Manufacturer Part#: |
MT29PZZZ8D4WKFEW-18 W.6D4 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 72G SLC DDR |
| More Detail: | Memory IC |
| DataSheet: | MT29PZZZ8D4WKFEW-18 W.6D4 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Obsolete |
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Memory has been around in some form or another since computers first started. In recent years, however, memory technology has become increasingly sophisticated and powerful. One example of this is the MT29PZZZ8D4WKFEW-18 W.6D4, a modern Flash memory device. This article will discuss the application field and working principle of this type of memory.
The MT29PZZZ8D4WKFEW-18 W.6D4 is a cost-effective, high-speed Flash memory device. It comes with an advertised read speed of up to 472 Mbps and a write speed of up to 424 Mbps, making it a suitable device for applications that demand high speeds and low latency. It is also durable and reliable, with an estimated mean time before failure of up to 3 million hours.
Its application field is wide-ranging and includes such diverse applications as: mobile gaming devices, digital camcorders, digital cameras, mobile phones, USB drives, media players, smart cards, medical devices, GPS receivers, aviation and aerospace, industrial control systems, automotive systems, and much more.
The working principle of the MT29PZZZ8D4WKFEW-18 W.6D4is based on the use of "floating-gate" technology. The core of the device is a single, insulated gate that is used to store electrical charges. This gate is surrounded by an "electrically neutral" layer, which prevents the charges from traveling beyond it. When the desired voltage is applied to the gate, the charges will be released and stored in the form of data on the gate.
The memory device can be programmed and erased in blocks, allowing for more efficient use of the memory. Programming and erasing can be done at very high speeds, the exact speed depending on the device\'s design and model. Furthermore, the MT29PZZZ8D4WKFEW-18 W.6D4 has an endurance of 1 million erase/program cycles, meaning that it is extremely reliable and durable.
The MT29PZZZ8D4WKFEW-18 W.6D4 is a powerful Flash memory device that is well-suited to a wide range of applications. It is reliable, durable, and very fast, making it a great choice for applications that require high speed and low latency. Its working principle is based on the use of "floating-gate" technology, and it can be programmed and erased in blocks very quickly and reliably. Overall, the memory device is a great choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT29F512G08CUAAAC5:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 52... |
| MT29C1G12MAADAFAMD-6 IT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 130... |
| MT29F4G08ABAEAH4:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29C1G12MAACVAMD-5 E IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 130... |
| MT29PZZZ8D4WKFEW-18 W.6D4 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 72G SLC DDRMemor... |
| MT29F128G08AMCDBL1-6:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 16... |
| MT29F256G08CECCBH6-6R:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 16... |
| MT29F2T08CUHBBM4-3R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 333M... |
| MT29F512G08CKCBBH7-6C:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 16... |
| MT29F256G08EFEBBWP:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
| MT29F64G08ABEBBH6-12:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 83M... |
| MT29F8G01ADBFD12-AATES:F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G SPI TBGAFLASH... |
| MT29E1T208ECHBBJ4-3:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1.125T PARALLEL ... |
| MT29F4G08BABWP-ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
| MT29C1G12MAADAEAKC-6 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 107... |
| MT29F2G08ABBEAHC:E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F2G16ABBEAHC:E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F8G08ADADAH4-IT:D | Micron Techn... | -- | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F8G16ABBCAH4-IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F4G08ABAEAWP-IT:E | Micron Techn... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F128G08CECABH1-12Z:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 10... |
| MT29F256G08CJAAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
| MT29F128G08CEEDBJ4-12:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 83... |
| MT29F256G08CBCBBWP-10M:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
| MT29VZZZ7D7HQKWL-062 W.G7A | Micron Techn... | 0.0 $ | 1000 | ALL IN ONE MCP 280GMemory... |
| MT29F16G08ABCBBH1-12AIT:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 83M... |
| MT29F8G08FACWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
| MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
| MT29F1G08ABCHC:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29C1G12MAACYAML-5 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 153... |
| MT29F2G08ABBEAH4:E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F64G08AECABH1-10:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 100... |
| MT29F64G08CECCBH1-12IT:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 100... |
| MT29F1G16ABBDAHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29F4G16ABAEAH4:E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29F8G16ABACAH4:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F256G08CKCBBH2-10:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
| MT29F256G08AKEBBK7-12:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 83... |
| MT29F4G08ABAFAH4-AITES:F | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL FBGA... |
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MT29PZZZ8D4WKFEW-18 W.6D4 Datasheet/PDF