MT29F8G16ABBCAH4-IT:C TR

Introduction

MT29F8G16ABBCAH4-IT:C TR is a type of memory from Micron Technology. This memory, which belongs to the category of double data rate (DDR) synchronous dynamic random access memory (SDRAM), is a high-speed, high-capacity memory for mobile and embedded applications.

Specifications

The MT29F8G16ABBCAH4-IT:C TR offers high performance, reliability and power efficiency. It has a high speed of 1.8 V and a data transfer rate of up to 3.2 Gb/s. Its operating frequency is up to 300 MHz and it has an 8-bank organization. It also boasts a burst length of 8 bits and a clock cycle of 7.8 ns. It comes with two 16-bit I/Os for the databus and a 20-bit address bus.

Application Field

The MT29F8G16ABBCAH4-IT:C TR is mainly used in mobile and embedded applications, such as navigation systems, vehicle-infotainment systems, digital TVs and personal healthcare systems. Its superior power efficiency and compact size make it ideal for handheld devices and small form factor applications.

Working Principle

The MT29F8G16ABBCAH4-IT:C TR utilizes parallel input and output of data bits to achieve high data rates. It makes use of a dual-port interface and double data rate (DDR) technique which allows for both reads and writes simultaneously. This memory also uses an external clock to control the system clock speed, and to synchronize data transfers between the memory and a system processor.

The MT29F8G16ABBCAH4-IT:C TR has a low chip operating voltage of 1.8V, making it suitable for power-sensitive applications. It also has a die size of 19 mm x 20 mm and a package size of 52-ball or 48-ball FBGA, further making it ideal for space-constraint applications. It requires an asynchronous reset pin (RST) to allow the system to initialize the DRAM address and control registers.

Conclusion

The MT29F8G16ABBCAH4-IT:C TR is a reliable and high-speed memory solution for mobile and embedded applications. It serves as an excellent choice for power-sensitive and space-constraint applications, and its double data rate (DDR) technique allows for simultaneous reads and writes at high speeds. It operates at a low chip operating voltage of 1.8V and requires an asynchronous reset pin (RST) to initialize the system.