MT29F128G08CBCABL85A3WC1

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MT29F128G08CBCABL85A3WC1 is a type of memory increasingly used in a wide variety of applications. It is a 3D NAND-based flash memory that offers a combination of high storage capacity, high performance, low power consumption and cost-efficiency.

As a multi-level cell (MLC) flash memory, MT29F128G08CBCABL85A3WC1 provides 128Gb density in a single chip. It is suitable for applications such as low-end solid-state drives (SSDs) and embedded systems, offering a faster read/write performance compared to 2D NAND memories. It also features a slim 14.5mm wafer, which enables a smaller form factor for end products.

In terms of working principle, MT29F128G08CBCABL85A3WC1 is based on a 3D NAND cell structure consisting of multiple planes, stacks and clusters of storage cells. The data is stored in physical memory cells in the form of electrons, and is read and written by means of an electrical pulse.

It can be divided into cells on two planes, with each plane containing multiple clusters of cells. Each cluster contains four planes of 8GB x 8, whereby data is written to and read from the memory cells in a four-plane parallel manner.

MT29F128G08CBCABL85A3WC1 also features Error-Correcting Codes (ECC) to improve reliability, as well as an on-chip temperature sensor which can be used to monitor its operating temperature and prevent overheating.

In conclusion, MT29F128G08CBCABL85A3WC1 can be classified as a memory, and it is mostly used in low-cost SSDs and embedded systems. It has a 3D NAND cell structure, allowing a faster read/write performance compared to 2D NAND, as well as an improved reliability due to ECC and on-chip temperature sensor features.

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