MT29F128G08CBEABH6-12:A Allicdata Electronics
Allicdata Part #:

MT29F128G08CBEABH6-12:A-ND

Manufacturer Part#:

MT29F128G08CBEABH6-12:A

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128G PARALLEL 83MHZ
More Detail: FLASH - NAND Memory IC 128Gb (16G x 8) Parallel 83...
DataSheet: MT29F128G08CBEABH6-12:A datasheetMT29F128G08CBEABH6-12:A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: --
Package / Case: --
Supplier Device Package: --
Description

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Memory is a vital part of computing for much of the world. From small desktop computers to massive data storage systems, memory plays a major role in how devices operate. A popular choice for memory systems is the MT29F128G08CBEABH6-12:A, which offers a wide range of features and functions.

The MT29F128G08CBEABH6-12:A is a 128 gigabit NAND (Not And) Flash memory device packed in a 71-ball FBGA package. It is primarily used for data storage applications, such as digital cameras and camcorders, mobile phones, gaming consoles and personal computers. The device is also suitable for use in industrial applications due to its reliability and system performance. It supports advanced control features such as delayed-write operations and wear-leveling, meaning it will reduce the rate of data loss due to power outages or other occurrences.

The device is based on 25nm floating-gate cell structures and is equipped with the latest memory technologies, including Toggle Mode multi-level cell (MLC) configuration, SLC+MLC configuration, Hardware-based read/write/erase control, Partial page read/write, Data security features and enhanced device & system performance.

The internal structure of MT29F128G08CBEABH6-12:A consists of two main components: the core and the array. The core is composed of a controller, a data bus and an Address Decoder. The controller is responsible for controlling all operations on the device, such as data read and write, data erase and data protection. The data bus is responsible for transferring data between the controller and the memory array. The Array consists of two main components: the Flash Memory Array (FMA) and the Error Correction Code (ECC) Module. The FMA consists of 8 separate NAND Flash memory arrays, each with its own ECC module. The ECC module is responsible for correcting any errors that may occur during the reading or writing of data to the memory array.

The overall operation of the MT29F128G08CBEABH6-12:A works like this: when data needs to be written to the memory array, it is sent to the controller where it is verified and decoded. The controller then sends the data to the FMA where it is written in blocks to the respective array. When reading data from the memory array, the controller sends a read request to the FMA which reads the data and sends it back to the controller. The data is then verified and sent to the appropriate destination.

The MT29F128G08CBEABH6-12:A is an advanced memory device, offering superior performance and reliability for a variety of applications. It provides a comprehensive solution for data storage applications with its wide range of features. This makes it an excellent choice for those looking for a reliable memory solution.

The specific data is subject to PDF, and the above content is for reference

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