Allicdata Part #: | MT29F1G01ABAFD12-AATES:F-ND |
Manufacturer Part#: |
MT29F1G01ABAFD12-AATES:F |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 1G SPI 24TBGA |
More Detail: | FLASH - NAND Memory IC 1Gb (1G x 1) SPI |
DataSheet: | MT29F1G01ABAFD12-AATES:F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 1Gb (1G x 1) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory serves as the largest storage device for computer applications. It keeps track of information, both immediately and indefinitely. The MT29F1G01ABAFD12-AATES:F is a type of memory specifically designed for Flash memory applications. This article will give an in-depth description of the application field of the MT29F1G01ABAFD12-AATES:F and how it works.
Application Field
The MT29F1G01ABAFD12-AATES:F memory is one of the most widely used Flash memory in the market. It has the capacity to hold up to 128GB of data and can reach speeds up to 533MHz. With a fast read and write speed, this memory is ideal for applications that require large amounts of data to be transferred in a short amount of time. This includes applications such as video streaming, multimedia applications, medical imaging, and embedded systems where fast read and write speeds are a must.
This memory is also widely used in data storage and backup applications. Many phone manufacturers, including Apple and Samsung, use this memory to store data on their devices. It is also used in digital cameras, usb flash drives and memory cards. This memory is widely used in automotive, industrial and energy applications because of its ability to withstand high temperatures, dust and moisture.
Working Principle
The MT29F1G01ABAFD12-AATES:F memory uses a combination of electronic components and algorithms to store and retrieve data. It is built using semiconductor technology and consists of multiple logic arrays connected together. The logic arrays are composed of transistors, capacitors and resistors, and they store the data bits in the form of 0s and 1s. Each memory cell is connected to its adjacent cells, allowing data to be read and written information quickly and efficiently.
When a device needs to access data stored in the memory, the memory controller transmits a read command to the memory. This command contains address and other control signals, and it tells the memory controller which data is to be read. The memory controller then instructs the logic arrays to read the data stored in the address and return it to the device for processing. When the data is written to the memory, the memory controller transmits a write command and the data is written to the address specified in the command.
Conclusion
The MT29F1G01ABAFD12-AATES:F memory is a type of memory specifically designed for Flash memory applications. It has a large capacity and fast read and write speeds, making it a great choice for applications that require large amounts of data to be transferred quickly. It is also used in data storage and backup applications, and can withstand high temperatures, dust and moisture. Furthermore, it uses a combination of transistors, capacitors and resistors to store and retrieve data in the form 0s and 1s. Overall, this type of memory is a great choice for applications that require fast read and write speeds and large memory capacities.
The specific data is subject to PDF, and the above content is for reference
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MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
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