Allicdata Part #: | MT29F1G08ABADAH4-E:D-ND |
Manufacturer Part#: |
MT29F1G08ABADAH4-E:D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 1G PARALLEL 63VFBGA |
More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel |
DataSheet: | MT29F1G08ABADAH4-E:D Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
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The MT29F1G08ABADAH4-E:D is a Flash memory device manufactured by Micron. Flash memory is a type of non-volatile storage, meaning that it retains stored data even when power is removed. Flash memory works by storing electrons on plates separated by a thin oxide layer. As the oxide layer is very thin and unable to withstand extremely high voltages, a high current is used to write to the device. This is why with Flash memory, data can be written quickly and reliably.
The MT29F1G08ABADAH4-E:D is a specialized variant of Flash memory, specifically designed for use in embedded systems. It features an NAND architecture, meaning that data is stored in blocks rather than as individual bits. This means it can handle significantly higher memory densities than earlier Flash memory devices, as well as faster read/write speeds. It also has support for advanced error correction techniques, allowing for reliable storage even in hostile environments.
The MT29F1G08ABADAH4-E:D is ideal for use in a wide range of embedded application fields. It is particularly suited to automotive and industrial applications, due to its wide temperature range (-40°C to +85°C), ECC-protected page read and write cycles, and wide endurance threshold (up to 25KV). It can also be used in consumer electronics, thanks to its small form factor and low power consumption.
In terms of working principle, the MT29F1G08ABADAH4-E:D supports a number of different types of operations. Reads, writes, and erases are all supported, and the device can be programmed to recognize certain commands. Depending on the configuration, the device is able to either enable or disable operations. It can also be set to respond to certain commands, such as reset or lock down. Overall, the device is designed to provide a reliable and efficient way of storing and accessing data.
In conclusion, the MT29F1G08ABADAH4-E:D is a powerful and reliable Flash memory device designed for use in embedded systems. Its wide range of features and wide temperature range make it suitable for use in a variety of applications in both automotive and industrial settings. Furthermore, its advanced error correction techniques and support for various types of operations make it a reliable and efficient choice for storing and accessing data.
The specific data is subject to PDF, and the above content is for reference
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MT29F8G08ABACAWP-IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
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MT29F4G08ABADAWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F8G16ABBCAH4:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
MT29F32G08CBADAWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32G PARALLEL 48T... |
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MT29F1G08ABBFAH4-ITE:F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F2G01ABAGDSF-IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI 16SOPFLAS... |
MT29F2G08ABAEAH4-IT:E | Micron Techn... | -- | 3476 | IC FLASH 2G PARALLEL 63VF... |
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44B5121-16-MT29C1401-L302 | TE Connectiv... | 2.14 $ | 1000 | 44B5121-16-MT29C1401-L302 |
MT29F1G08ABAEAH4:E TR | Micron Techn... | 1.91 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F2G08ABAEAH4:E TR | Micron Techn... | 3.17 $ | 5000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08ABAEAWP-IT:E TR | Micron Techn... | 3.88 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F64G08AFAAAWP-ITZ:A TR | Micron Techn... | 40.25 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
EPD5955-22-MT29C1693L016 | TE Connectiv... | 1.09 $ | 1000 | 55A CABLE/SINGLE WALLCond... |
MT29F2G08AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G16ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
MT29F16G08MAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
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