| Allicdata Part #: | MT29F1G08ABAEAH4-AITX:E-ND |
| Manufacturer Part#: |
MT29F1G08ABAEAH4-AITX:E |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 1G PARALLEL FBGA |
| More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel |
| DataSheet: | MT29F1G08ABAEAH4-AITX:E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 1Gb (128M x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MT29F1G08ABAEAH4-AITX:E is a type of memory, which provides the capability to store data and information throughout a device or system. It has many different applications and uses in different areas, such as computers, consumer electronics, scientific instruments, and many more. This article aims to provide an overview of the MT29F1G08ABAEAH4-AITX:E application field and its working principle.
The MT29F1G08ABAEAH4-AITX:E is a type of NAND flash memory, which is a type of non-volatile memory and a scalable memory technology that provides excellent performance and reliability. It is a removable memory device and provides high-speed access times with low power consumption. This makes it ideal for use in consumer electronic devices and other embedded systems, such as mobile phones, digital cameras and other portable devices.
The MT29F1G08ABAEAH4-AITX:E is an integrated circuit that contains several storage elements, such as transistors, capacitors and resistors, which are connected together in a memory cell. The memory cells are arranged in an array, with each row and column of cells storing one bit of data. When power is applied to the control gate of the memory cell, the transistor can change its state, which is then stored as either 1 or 0. This process is known as programming, and it is the basis of how information is stored in this type of memory.
The MT29F1G08ABAEAH4-AITX:E is a type of random access memory (RAM) technology, which allows for fast reads and writes of data. It has a very low latency (time required to make a read or write operation), which makes it ideal for multimedia applications such as gaming. It also has a low power consumption, which makes it well suited for embedded applications.
The MT29F1G08ABAEAH4-AITX:E is often used as a replacement for RAM in embedded systems. It offers a cost-effective alternative to RAM in both cost and power consumption, while providing much better performance than RAM. This makes it ideal for embedded applications where low power and cost are essential, such as automotive and medical devices. It is also used in testing and measurement instruments, where data collection and analysis requires fast memory access with low power consumption.
The MT29F1G08ABAEAH4-AITX:E is also well suited for use in digital cameras, as it can store large amounts of data in a small size. It also provides higher speeds and faster read/write times than other types of memory, making it ideal for capturing high-quality images in digital cameras.
The MT29F1G08ABAEAH4-AITX:E is a reliable and dependable type of memory. It has been tested to meet stringent reliability standards, and requires very minimal maintenance. This makes it suitable for use in a variety of environments, and it can hold up to extreme temperatures and vibration.
In conclusion, the MT29F1G08ABAEAH4-AITX:E is a type of NAND flash memory that is suitable for a variety of applications, such as embedded systems and digital cameras. It offers excellent speed and performance, and low power consumption, making it well-suited for use in handheld devices and embedded applications. It is a reliable and dependable type of memory, and is well-suited for demanding tasks.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT29F512G08CUAAAC5:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 52... |
| MT29C1G12MAADAFAMD-6 IT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 130... |
| MT29F4G08ABAEAH4:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29C1G12MAACVAMD-5 E IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 130... |
| MT29PZZZ8D4WKFEW-18 W.6D4 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 72G SLC DDRMemor... |
| MT29F128G08AMCDBL1-6:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 16... |
| MT29F256G08CECCBH6-6R:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 16... |
| MT29F2T08CUHBBM4-3R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 333M... |
| MT29F512G08CKCBBH7-6C:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 16... |
| MT29F256G08EFEBBWP:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
| MT29F64G08ABEBBH6-12:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 83M... |
| MT29F8G01ADBFD12-AATES:F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G SPI TBGAFLASH... |
| MT29E1T208ECHBBJ4-3:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1.125T PARALLEL ... |
| MT29F4G08BABWP-ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
| MT29C1G12MAADAEAKC-6 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 107... |
| MT29F2G08ABBEAHC:E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F2G16ABBEAHC:E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F8G08ADADAH4-IT:D | Micron Techn... | -- | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F8G16ABBCAH4-IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F4G08ABAEAWP-IT:E | Micron Techn... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F128G08CECABH1-12Z:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 10... |
| MT29F256G08CJAAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
| MT29F128G08CEEDBJ4-12:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 83... |
| MT29F256G08CBCBBWP-10M:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
| MT29VZZZ7D7HQKWL-062 W.G7A | Micron Techn... | 0.0 $ | 1000 | ALL IN ONE MCP 280GMemory... |
| MT29F16G08ABCBBH1-12AIT:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 83M... |
| MT29F8G08FACWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
| MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
| MT29F1G08ABCHC:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29C1G12MAACYAML-5 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 153... |
| MT29F2G08ABBEAH4:E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F64G08AECABH1-10:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 100... |
| MT29F64G08CECCBH1-12IT:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 100... |
| MT29F1G16ABBDAHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29F4G16ABAEAH4:E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29F8G16ABACAH4:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F256G08CKCBBH2-10:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
| MT29F256G08AKEBBK7-12:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 83... |
| MT29F4G08ABAFAH4-AITES:F | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL FBGA... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
MT29F1G08ABAEAH4-AITX:E Datasheet/PDF