MT29F1G08ABAFAWP-ITE:F Allicdata Electronics
Allicdata Part #:

MT29F1G08ABAFAWP-ITE:F-ND

Manufacturer Part#:

MT29F1G08ABAFAWP-ITE:F

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1G PARALLEL TSOP
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel
DataSheet: MT29F1G08ABAFAWP-ITE:F datasheetMT29F1G08ABAFAWP-ITE:F Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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MT29F1G08ABAFAWP-ITE:F is a type of memory chip used in a variety of applications, most commonly in consumer electronics. It is a Serial NOR Flash memory, part of the MT29F family. The MT29F1G08ABAFAWP-ITE:F is designed with a 1 Gbit (128 MBit) density and a sector-erase unit of 256 KB. It can read at speeds up to 120 MB/s and can write at speeds up to 25 MB/s, making it a reliable memory solution for a variety of embedded applications that require large amounts of data to be stored.

The MT29F1G08ABAFAWP-ITE:F memory chip is versatile and has a wide range of applications, such as automotive systems, mobile phones and telecommunication systems, digital television and set top boxes, home gaming systems, digital still cameras and camcorders, liquid crystal displays, point of sale terminals, and medical equipment. In all of these applications, the MT29F1G08ABAFAWP-ITE:F enables reliable, fast storage and retrieval of data.

The MT29F1G08ABAFAWP-ITE:F memory chip employs a low-pin count multi-chip package and is compliant with the CFI (Common Flash Interface) standard. It offers details such as systematic error correction and soft reset for scratch pad cells. For non-volatile memory features, the memory chip offers a self-refresh capability and an auto power down feature.

The working principle behind the MT29F1G08ABAFAWP-ITE:F memory chip utilizes a process called Flash cell, which stores data on an internal floating gate within the memory cell, allowing the memory chip to be erased and reprogrammed. When data is written to the memory chip, electrons pass through the cell gate and are stored in the floating gate. This enables the data to remain on the chip even when the power is turned off. The electrons that pass through the gate also create a second layer of protection that guards the data from being lost due to voltage fluctuations. As a result, the memory chip itself is protected from damage due to improper handling.

To erase the data from the memory chip, a process called “erase cycling” is employed. This process is initiated by using a signal called a flash command signal, which is sent to the memory chip and instructs it to erase the data. When the memory chip has received and processed the signal, it will commence erasing the data. As the process is completed, the memory chip will then be programmed to store new data, allowing the data to be changed as needed.

Overall, the MT29F1G08ABAFAWP-ITE:F memory chip is a reliable memory solution that is well-suited for a wide variety of embedded applications. Combining the advantages of a low-pin count package, CFI compliant standards and an integrated system error correction and soft reset feature, this memory chip offers unsurpassed reliability, fast throughput, large capacity and an extended range of sectors. It is ideal for applications that require fast and reliable data storage.

The specific data is subject to PDF, and the above content is for reference

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