| Allicdata Part #: | MT29F1T08EEHAFJ4-3T:ATR-ND |
| Manufacturer Part#: |
MT29F1T08EEHAFJ4-3T:A TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 1T PARALLEL 333MHZ |
| More Detail: | FLASH - NAND Memory IC 1Tb (128G x 8) Parallel 333... |
| DataSheet: |  MT29F1T08EEHAFJ4-3T:A TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 1Tb (128G x 8) |
| Clock Frequency: | 333MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.5 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MT29F1T08EEHAFJ4-3T:A TR application field and working principle
Introduction to Memory
Memory is one of the most important components of a computer system. Its function is to store data, both data itself and the rules and instructions of a computer program. These data and instructions are needed for computer operation, and without them the computer cannot do anything. There are three types of memory: primary memory, secondary memory and cache memory.Primary memory is Random Access Memory (RAM), which is used for temporarily storing data that is often used. It is volatile, so when the computer is shut down, all the data in RAM is lost. On the other hand, secondary memory is non-volatile and therefore used for long-term storage of data. This includes hard drives, SSDs, and USBs, which are all forms of secondary memory. Cache memory is the third type of memory and is used for the quick retrieval of frequently used data.MT29F1T08EEHAFJ4-3T: Application Field and Working Principle
MT29F1T08EEHAFJ4-3T is a multi-level cell (MLC) NAND Flash in TSOP package. It is a type of non-volatile memory and has a high storage capacity, making it ideal for storing large amounts of data. It has multiple bits per cell, which allows for higher density of data storage. This makes it suitable for storing large amounts of data such as music, videos and HD images.The working principle of the MT29F1T08EEHAFJ4-3T is as follows. It has two terminals, the source and the drain. A voltage is applied between these two terminals and when a cell is charged, a certain amount of electric field will be present between them. This electric field will then strengthen or weaken depending on the amount of charge in the cell, thus creating a data bit that can be read or written.The MT29F1T08EEHAFJ4-3T is used in a variety of applications, such as embedded systems, mobile phones, digital media players, and computer storage devices. It is also used in automotive applications, cameras, personal navigation devices and gaming consoles. The device supports various features such as ECC, wear-leveling, and garbage collection. MT29F1T08EEHAFJ4-3T can be used in many different applications, including data storage, data logging and data analysis.Conclusion
MT29F1T08EEHAFJ4-3T is a type of multi-level cell NAND Flash in TSOP package. It is capable of storing large amounts of data due to its multiple bit per cell architecture, making it suitable for audio, video, HD images, and other large data sets. Its working principle is based on a voltage being applied between two terminals, creating an electric field that can be manipulated to store data. The device is used in a variety of applications such as automotive, digital media players, embedded systems, and computers. It is a reliable, efficient and cost-effective solution for data storage, logging and analysis.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "MT29" Included word is 40
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT29F512G08CUAAAC5:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 52... |
| MT29C1G12MAADAFAMD-6 IT TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 130... |
| MT29F4G08ABAEAH4:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29C1G12MAACVAMD-5 E IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 130... |
| MT29PZZZ8D4WKFEW-18 W.6D4 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 72G SLC DDRMemor... |
| MT29F128G08AMCDBL1-6:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 16... |
| MT29F256G08CECCBH6-6R:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 16... |
| MT29F2T08CUHBBM4-3R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 333M... |
| MT29F512G08CKCBBH7-6C:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 16... |
| MT29F256G08EFEBBWP:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
| MT29F64G08ABEBBH6-12:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 83M... |
| MT29F8G01ADBFD12-AATES:F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G SPI TBGAFLASH... |
| MT29E1T208ECHBBJ4-3:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1.125T PARALLEL ... |
| MT29F4G08BABWP-ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
| MT29C1G12MAADAEAKC-6 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 107... |
| MT29F2G08ABBEAHC:E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F2G16ABBEAHC:E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F8G08ADADAH4-IT:D | Micron Techn... | -- | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F8G16ABBCAH4-IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F4G08ABAEAWP-IT:E | Micron Techn... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F128G08CECABH1-12Z:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 10... |
| MT29F256G08CJAAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
| MT29F128G08CEEDBJ4-12:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 83... |
| MT29F256G08CBCBBWP-10M:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
| MT29VZZZ7D7HQKWL-062 W.G7A | Micron Techn... | 0.0 $ | 1000 | ALL IN ONE MCP 280GMemory... |
| MT29F16G08ABCBBH1-12AIT:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 83M... |
| MT29F8G08FACWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
| MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
| MT29F1G08ABCHC:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29C1G12MAACYAML-5 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 153... |
| MT29F2G08ABBEAH4:E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F64G08AECABH1-10:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 100... |
| MT29F64G08CECCBH1-12IT:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 100... |
| MT29F1G16ABBDAHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29F4G16ABAEAH4:E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29F8G16ABACAH4:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F256G08CKCBBH2-10:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
| MT29F256G08AKEBBK7-12:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 83... |
| MT29F4G08ABAFAH4-AITES:F | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL FBGA... |
Latest Products
MT53D512M64D4NZ-053 WT ES...
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
ECF620AAACN-C1-Y3-ES
LPDDR3 6G DIE 192MX32Memory IC
MT53B384M64D4NK-053 WT ES...
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
70V25S45J
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
71321LA55JI8
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
7027L55PFI8
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...