| Allicdata Part #: | MT29F2G01AAAEDH4:E-ND |
| Manufacturer Part#: |
MT29F2G01AAAEDH4:E |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 2G SPI 63VFBGA |
| More Detail: | FLASH - NAND Memory IC 2Gb (2G x 1) SPI 63-VFBGA... |
| DataSheet: | MT29F2G01AAAEDH4:E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 2Gb (2G x 1) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | SPI |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 63-VFBGA |
| Supplier Device Package: | 63-VFBGA (9x11) |
| Base Part Number: | MT29F2G01 |
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Memory is an essential part of any modern electronic device. As technology advances, memory chips have been developed to increase memory density, speed, and capacity. The MT29F2G01AAAEDH4:E is a 2 Gigabit (Gb) NAND Flash-based memory chip that enables significant capacity, performance and improved power efficiency. This article will explain the application field of this memory chip and cover its working principle.
Application Field of MT29F2G01AAAEDH4:E Memory
The MT29F2G01AAAEDH4:E is a high-density, high-speed 2 Gb NAND Flash memory chip which is suitable for a wide-range of consumer and embedded applications. This chip can be found in a variety of consumer and embedded devices such as gaming consoles, media players, digital cameras and a variety of smartphones.
The MT29F2G01AAAEDH4:E is also used in automotive systems such as satellite navigation systems. This memory chip can be used in industrial applications such as data logging and recording systems. It can also be used in medical devices and security systems.
Working Principle of MT29F2G01AAAEDH4:E Memory
The MT29F2G01AAAEDH4:E is a NAND Flash memory chip that is based on floating gate CMOS technology. This chip is composed of individual memory cells which contain two transistors, a floating gate and a control gate. Each cell has a capacity of one electron. The electrons are monitored and stored in each cell depending on the state of the control gate.
The MT29F2G01AAAEDH4:E memory chip can store 2 Gb of data which is equivalent to a billion bits. This chip uses an asynchronous mode of data transfer which allows the chip to communicate with external devices such as USB and SATA interfaces.
The MT29F2G01AAAEDH4:E memory chip uses several techniques to ensure reliable and long-term data storage. These techniques include Error Correction Code (ECC), bad block management and wear leveling algorithms. These techniques help to improve the chip\'s durability and data retention.
The MT29F2G01AAAEDH4:E memory chip also uses a page cache feature which allows the chip to operate faster. This feature allows the chip to store data in a page cache and then access the data from the cache instead of from the memory cell if the data resides in the cache.
Conclusion
The MT29F2G01AAAEDH4:E is a 2 Gb NAND Flash based memory chip that is suitable for a wide-range of consumer and embedded applications. This chip uses floating gate CMOS technology to store data in its memory cells. It also includes several techniques in order to improve its durability and data retention. The chip also includes a page cache feature that allows it to operate faster.
The specific data is subject to PDF, and the above content is for reference
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MT29F2G01AAAEDH4:E Datasheet/PDF