| Allicdata Part #: | MT29F2G08ABAGAH4-ITE:G-ND |
| Manufacturer Part#: |
MT29F2G08ABAGAH4-ITE:G |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 2G PARALLEL FBGA |
| More Detail: | FLASH - NAND Memory IC 2Gb (256M x 8) Parallel |
| DataSheet: |  MT29F2G08ABAGAH4-ITE:G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 2Gb (256M x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
Description
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Introduction to Memory
Memory is an integral part of any computer system, as it is responsible for storing and retrieving information. Memory is a crucial component in the design of any computer system, and it is divided into various types, such as RAM and ROM, SRAM and DRAM, and flash memory. In this article, we will be discussing the memory IC MT29F2G08ABAGAH4-ITE:G and its application field and working principle.Overview of MT29F2G08ABAGAH4-ITE:G
MT29F2G08ABAGAH4-ITE:G is a type of non-volatile memory (NVM) which is built with the latest 1Y nanometer process technology from the Memory and Storage Technology Group (MSTG) of Toshiba Corporation. The IC has a capacity of 8 gigabytes (GB), with a single Die-Stack Package-on-Package (DS-PoP) IC package. It is a high-performance, cost-effective, and reliable NVM that uses low power consumption for a wide range of applications such as intelligent wearables and industrial designs.Application Field
The excellent performance characteristics of MT29F2G08ABAGAH4-ITE:G make it ideal for use in a variety of industrial and consumer applications, including but not limited to: wearable devices, industrial designs, home automation, automotive systems, robotics, navigation systems, and connected IoT devices. It is also suitable for use in embedded systems, portable devices, and any other application that requires a high-performance, reliable NVM.Working Principle
The MT29F2G08ABAGAH4-ITE:G works on the principle of gates and capacitors. The gate is an electronic component that has the ability to control the flow of electrons between two points and consists of several transistors. The capacitors are capacitors that store electrical energy in an electrostatic field. The gates and capacitors together enable the operation of a memory cell, which has the ability to store and retrieve data. This is done by controlling the number of transistors and capacitors, which allow the memory cell to have different states representing different binary values (1s and 0s).The basic operation of MT29F2G08ABAGAH4-ITE:G is based on the Charge-Trap Flash (CTF) technology which uses the devices’ gate and capacitors to store data as electric charge in an isolated, electrically isolated area between the gate and the electrode. This data is retained even when power is removed from the device. The charge-trap layout also helps reduce the complexity of the layout, and reduces the number of transistors used for the control and storage of the memory cell.Conclusion
MT29F2G08ABAGAH4-ITE:G is a high-performance, cost-effective, and reliable non-volatile memory IC that is suitable for a wide range of applications. It has an 8GB capacity, and uses the latest 1Y nanometer process technology from Toshiba’s MSTG. The IC works on the principle of gates and capacitors, and utilizes the Charge-Trap Flash (CTF) technology, which enables data to be stored as electric charge in an isolated, electrically isolated area between the gate and the electrode.The specific data is subject to PDF, and the above content is for reference
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