Allicdata Part #: | MT29F32G08CBCDBJ4-10:D-ND |
Manufacturer Part#: |
MT29F32G08CBCDBJ4-10:D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 32G PARALLEL 100MHZ |
More Detail: | FLASH - NAND Memory IC 32Gb (4G x 8) Parallel 100M... |
DataSheet: | MT29F32G08CBCDBJ4-10:D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 32Gb (4G x 8) |
Clock Frequency: | 100MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
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Memory is a key component in devices such as computers, and the MT29F32G08CBCDBJ4-10:D is a type of memory chip designed for use in critical and demanding environments. The memory chip is used in a wide range of applications, from smartphones to industrial automation systems, and is capable of delivering high performance and reliability.
The MT29F32G08CBCDBJ4-10:D is a 32GB double data rate three (DDR3) chip, meaning it can process data at twice the speed of DDR2 chips. It consists of 4 gigabit banks and is made from 1.8V or 3.3V low-power advanced CMOS (complementary metal-oxide semiconductor). The chip operates on a frequency of 1066 MHz with an XOR data bus and is capable of clock frequencies of up to 1.13GHz. The package for the memory chip is made from an industry-standard NAND Flash technology.
The MT29F32G08CBCDBJ4-10:D has several key features that distinguish it from other memory chips. The chip is designed to be reliable and stable, and is capable of withstanding extreme temperatures, up to 125°C, and voltage surges up to 4.2V. Additionally, the chip provides excellent signal integrity, making it reliable and robust in applications where electrical interference is a concern. It also offers high endurance levels, making it suitable for write-heavy workloads, such as database-intensive applications.
The MT29F32G08CBCDBJ4-10:D has a wide range of applications in industrial automation, medical equipment, gaming consoles, or other mission-critical applications. It provides fast throughput, allowing for faster data transmission and improved response time in applications that require rapid processing. It can also be used in power-management applications to facilitate energy savings and minimize the use of expensive batteries.
The working principle behind the MT29F32G08CBCDBJ4-10:D is based on capacitors and transistors. Transistors can be used to switch data from one location to another, while capacitors are used to store the data inside the memory cells. The memory cells are used to store a single bit of information, which is then written to or read from the chip. The chip is designed to be energy efficient, meaning it uses a minimal amount of power to carry out the necessary operations. It is also designed to be durable, meaning that its memory cells will remain stable over the life of the chip.
The MT29F32G08CBCDBJ4-10:D is a reliable, high-performance memory chip that can be used in a variety of applications in which data must be stored and retrieved quickly and reliably. It is designed to withstand the rigors of extreme temperatures and voltage surges, making it suitable for mission-critical applications. Additionally, the chip is energy efficient and offers high endurance levels, making it suitable for write-heavy workloads. By combining advanced technology and design, the MT29F32G08CBCDBJ4-10:D provides the right balance of performance, reliability, and power efficiency.
The specific data is subject to PDF, and the above content is for reference
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MT29F2G01ABAGDSF-IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI 16SOPFLAS... |
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MT29F2G08AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G16ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
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