| Allicdata Part #: | MT29F4G01ABAFD12-AATES:F-ND |
| Manufacturer Part#: |
MT29F4G01ABAFD12-AATES:F |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 4G SPI TBGA |
| More Detail: | FLASH - NAND Memory IC 4Gb (4G x 1) SPI |
| DataSheet: |  MT29F4G01ABAFD12-AATES:F Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 4Gb (4G x 1) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | SPI |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 105°C (TC) |
Description
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MT29F4G01ABAFD12-AATES:F is an SLC NAND Flash with a maximum erase count of up to 500K. It can be used for high-speed data transmission applications and embedded systems, such as laptop computers, digital imaging, gaming devices, media players, and the like. This type of memory is known for its fast read and write times, high endurance, and low power consumption.
The MT29F4G01ABAFD12-AATES:F is a four-gigabyte memory device that is composed of four 1GB blocks. It has an 8-bit multiplexed data bus and a 24-bit address bus. It has a maximum random access time of 12 ns, and a data rate of up to 133 Mbps. It is rated to operate between 0 and 70°C and a voltage supply of 2.7 - 3.6V. This device is compliant with the JEDEC ® standard and is compatible with the NAND Flash Memory Command Set.
The working principle of the MT29F4G01ABAFD12-AATES:F is based on the NAND Flash memory technology. In this type of memory, data is stored in cells in a 2D array. Each cell is composed of two gates, a select gate and a floating gate. When a voltage is applied to the select gate, the floating gate will either allow or block electrons from passing through, thereby storing a single bit of data.
The MT29F4G01ABAFD12-AATES:F is used in applications requiring high speed data transfer, such as in digital cameras, multimedia applications, and embedded systems. It is also used in data storage and retrieval applications, such as in Flash drives. This type of memory is popular due to its fast speed, low power consumption, and endurance.
In addition to its use in data storage and retrieval applications, the MT29F4G01ABAFD12-AATES:F can be used in embedded systems, such as laptops, gaming consoles, and other electronic products. It is also used in automotive applications, such as in control units. This type of memory is ideal for these types of applications because of its low power consumption and endurance.
The MT29F4G01ABAFD12-AATES:F memory device is a versatile and reliable memory product for a wide range of applications. It is known for its fast read and write times, high endurance and low power consumption, making it ideal for many digital devices and embedded systems. Its ease of use makes it a great choice for applications requiring high speed and low power usage.
The MT29F4G01ABAFD12-AATES:F is a four-gigabyte memory device that is composed of four 1GB blocks. It has an 8-bit multiplexed data bus and a 24-bit address bus. It has a maximum random access time of 12 ns, and a data rate of up to 133 Mbps. It is rated to operate between 0 and 70°C and a voltage supply of 2.7 - 3.6V. This device is compliant with the JEDEC ® standard and is compatible with the NAND Flash Memory Command Set.
The working principle of the MT29F4G01ABAFD12-AATES:F is based on the NAND Flash memory technology. In this type of memory, data is stored in cells in a 2D array. Each cell is composed of two gates, a select gate and a floating gate. When a voltage is applied to the select gate, the floating gate will either allow or block electrons from passing through, thereby storing a single bit of data.
The MT29F4G01ABAFD12-AATES:F is used in applications requiring high speed data transfer, such as in digital cameras, multimedia applications, and embedded systems. It is also used in data storage and retrieval applications, such as in Flash drives. This type of memory is popular due to its fast speed, low power consumption, and endurance.
In addition to its use in data storage and retrieval applications, the MT29F4G01ABAFD12-AATES:F can be used in embedded systems, such as laptops, gaming consoles, and other electronic products. It is also used in automotive applications, such as in control units. This type of memory is ideal for these types of applications because of its low power consumption and endurance.
The MT29F4G01ABAFD12-AATES:F memory device is a versatile and reliable memory product for a wide range of applications. It is known for its fast read and write times, high endurance and low power consumption, making it ideal for many digital devices and embedded systems. Its ease of use makes it a great choice for applications requiring high speed and low power usage.
The specific data is subject to PDF, and the above content is for reference
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