MT29F4G08ABADAH4-AITX:D

Series:	--
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	4Gb (512M x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)

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Introduction

MT29F4G08ABADAH4-AITX:D is a high-speed multi-chip package Flash memory designed to address the needs of mainstream tablets and handheld devices. This memory offers a great combination of both speed and capacity. It can be used in various applications such as datacenter storage, enterprise storage, semiconductor memory, and even embedded/industrial applications.

Application Field

MT29F4G08ABADAH4-AITX:D offers a wide range of applications for tablet and handheld devices. This Flash memory is made to be a small, and fast, offering a great combination of both speed and capacity. It is ideal for applications that require small memory packages and high-performance. This memory can be used in datacenter storage applications, such as servers and enterprise storage applications. The memory can be used in semiconductor memory applications, especially when large amounts of data need to be stored. Finally, the memory can be used in embedded/industrial applications, such as home automation and security systems.

Features

MT29F4G08ABADAH4-AITX:D has some acclaimed features including high-speed performance, internal protection circuitry, high-reliability, wide-range temperature support and low power consumption. The memory boasts of a very high speed of 8,000MT/s. This means that data can be stored and retrieved at a more rapid rate, meaning greater performance. Additionally, it features internal protection circuitry which helps protect against power interruptions, over-charging, voltage drops and other power issues. The circuit also prevents data loss and damage to the internal memory.This memory also has wider temperature support than other Flash memory chips, providing effective operationeven under harsh conditions. Additionally, the memory has a low power consumption, making it even more energy-efficient.

Working Principle

MT29F4G08ABADAH4-AITX:D applies the Non-Volatile Memory (NVM) technology to its operation. NVM is a form of non-volatile memory which retains the data even when power is not supplied. The memory uses the components and logic cells of the NVM chips to store and retrieve data, which are arranged in a string of memory cells. The data stored in the memory is broken down into a string of bits, which are organized into a page. Each page is controlled by an array of control signals, which are sent from the flash controller. The controller also manages the data flow, and directs the operation of the memory cells.The memory uses signals to communicate with the other components in the system. These include control signals, data signals and address signals. The control signals dictate the flow of the data, while the data signals dictate what data is stored. Finally, the address signals are used to point to a specific memory location in the memory array.

Conclusion

MT29F4G08ABADAH4-AITX:D is a high-speed multi-chip package Flash memory designed to address the needs of mainstream tablets and handheld devices. This Flash memory has some acclaimed features including high-speed performance, internal protection circuitry, high-reliability, wide-range temperature support and low power consumption. It is suitable for numerous applications including datacenter storage, enterprise storage, semiconductor memory and embedded/industrial applications. The working principle of MT29F4G08ABADAH4-AITX:D is based around Non-Volatile Memory (NVM) technology, which uses components and logic cells to store and retrieve data, managed by a Flash controller.

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