| Allicdata Part #: | MT29F4G08ABADAH4-AT:D-ND |
| Manufacturer Part#: |
MT29F4G08ABADAH4-AT:D |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 4G PARALLEL 63VFBGA |
| More Detail: | FLASH - NAND Memory IC 4Gb (512M x 8) Parallel |
| DataSheet: | MT29F4G08ABADAH4-AT:D Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 4Gb (512M x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
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Memory is considered one of the most important components of computing devices. In fact, a computing device simply cannot function without the use of memory. Memory is the place where a computing device stores data or programs that it needs to run. Memory can be divided into two types: volatile and non-volatile. Volatile memory needs a constant power supply to keep its contents while non-volatile memory can retain its contents even when the power supply is removed. MT29F4G08ABADAH4-AT is a type of non-volatile memory.
MT29F4G08ABADAH4-AT is an ONFi NAND Flash Memory device with 4Gb density. It belongs to TLC (Triple-Level Cell) NAND Flash family and is based on ONFi 3.0 NAND specification. As a non-volatile memory device, MT29F4G08ABADAH4-AT does not require power to retain its content as it stores data in cells that suffer from minimal leakage. Due to its non-volatile nature and small size, this type of memory has a wide range of applications.
MT29F4G08ABADAH4-AT is typically used in portable or handheld devices, such as digital cameras, gaming devices, smartphones and tablets. This type of memory device is also used in embedded systems, such as medical equipment and test benches. Additionally, MT29F4G08ABADAH4-AT is also used in automotive applications, such as in-car entertainment systems, as well as in storage devices, such as hard drives and SSDs. These applications require the robustness and durability of non-volatile memory, something that MT29F4G08ABADAH4-AT provides.
MT29F4G08ABADAH4-AT works using a floating gate technique to store data. This means that the device uses transistors with floating gates to store electrons and create a charge on the gate. The charge on the gate is used to store a 0 or a 1, representing digital data. These transistors can be programmed, erased and re-programmed, making them an essential component in non-volatile memory devices. The device supports multiple protocols and operations, including Read, Write, Block Erase, ID Query, Reallocation and Device ECC.
MT29F4G08ABADAH4-AT memory is designed to be reliable, power efficient and robust. It is one of the most popular and widely used memory types in the market, due to its multi-level cell storage, small size and power efficiency. The device is also backward compatible with ONFi 1.0 and ONFi 2.2 and supports low voltage operation, making it suitable for a variety of applications.
In conclusion, MT29F4G08ABADAH4-AT is a type of non-volatile memory device that is based on ONFi 3.0 NAND specification. It is typically used in portable and embedded devices, as well as in automotive and storage applications. The memory device operates using a floating gate technique and supports multiple operations and protocols. Moreover, it is power-efficient, robust, and backward-compatible with previous ONFi specifications. As such, MT29F4G08ABADAH4-AT is one of the most widely used and reliable memory devices in the market.
The specific data is subject to PDF, and the above content is for reference
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MT29F4G08ABADAH4-AT:D Datasheet/PDF