MT29F4G08ABBDAH4-ITE:D Allicdata Electronics
Allicdata Part #:

MT29F4G08ABBDAH4-ITE:D-ND

Manufacturer Part#:

MT29F4G08ABBDAH4-ITE:D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4G PARALLEL 63VFBGA
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel
DataSheet: MT29F4G08ABBDAH4-ITE:D datasheetMT29F4G08ABBDAH4-ITE:D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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The MT29F4G08ABBDAH4-ITE:D is a type of single level cell (SLC) (a type of non-volatile memory) built using a highly advanced 21 least significant bit (LSB) page programming architecture. The memory offers an array of features, including an ultra-low power consumption and a fast read/write speed. The product is used in a wide range of applications and is well-suited for applications such as ultra-low power data logging, real-time state-of-the-art I/O processing, automotive, military, and security applications.

Memory

The MT29F4G08ABBDAH4-ITE:D memory is one of the most cost-effective and reliable memories available. It is built with advanced 2x nm CMOS technology, allowing it to provide high density with a low power consumption. It also has a long endurance of 5000 P/E cycles and a high retention time. The memory offers a wide voltage range of 1.8V to 3.3V and operates in the temperature range of -40°C to +85°C.

The device offers a high programming speed of 10µs/byte page-programming, which eliminates wait between writes, and a low read latency. Additionally, the MT29F4G08ABBDAH4-ITE:D memory provides a 1KB burst-read operation, ensuring ultra-fast data transfers between commands.

Application Fields

The MT29F4G08ABBDAH4-ITE:D memory is widely used in a range of applications, including automotive, military, and security applications. The device can be used for data logging, such as logging car speed and fuel efficiency. Additionally, the device can be used for real-time I/O processing, storing data for navigation systems and radar systems, and for security applications, such as storing passwords. The device is also used for industrial applications, such as controlling motors and pumps, and for handling real-time data for robots in the automation industry.

Additionally, the device is used for embedded applications, such as industrial and medical equipment, smart cards, and hand-held devices. The device is also used in networks, as it can store network log files, and in surveillance systems, as it can store video streaming data.

Working Principle

The working principle of the MT29F4G08ABBDAH4-ITE:D memory is based on the principle of non-volatile memory. The device consists of multiple memory cells, each storing a single bit of information. Data is written to the memory cells using a vertical NAND technology and the data is retained even if the power is removed.

The device also has error correction capabilities, ensuring that data is not corrupted or lost in the case of a sudden power loss. The device has a serial number, allowing it to be identified by host computers, and can be interfaced with through a serial or parallel bus. It has a 2-wire serial interface (SPI) and a 4-wire multi-IO interface (MMC/SD).

The MT29F4G08ABBDAH4-ITE:D memory is an excellent choice for data logging applications, as it offers high performance and reliability at a competitive cost. It is a highly advanced product that has been designed using state-of-the-art CMOS technology and offers high endurance, low latency, and a wide voltage range, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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