Allicdata Part #: | MT29F4G16ABCWC:C-ND |
Manufacturer Part#: |
MT29F4G16ABCWC:C |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 4G PARALLEL 48TSOP |
More Detail: | FLASH - NAND Memory IC 4Gb (256M x 16) Parallel ... |
DataSheet: | MT29F4G16ABCWC:C Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 4Gb (256M x 16) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TSOP |
Supplier Device Package: | 48-TSOP |
Base Part Number: | MT29F4G16 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Application Field and Working Principle of MT29F4G16ABCWC:C
MT29F4G16ABCWC:C is a 4 Giga Bits (GB) Multi-level Cell (MLC) NAND Flash memory solution with 16 Gigabit (Gb) array density and 8 bits/512 bytes of page size. It belongs to one of the most important categories of memory: NAND flash memory.
The main applications of MT29F4G16ABCWC:C are embedded applications such as automotive in-vehicle infotainment systems and digital cameras, as well as HDD applications. It is fitted with advanced features such as advanced layered Error Correction Code (ECC) which ensures high performance and robust data retention. It has an optimized command set and it supports a wide range of advanced features including Non-Volatile Memory Express or NVMe.
The working principle of MT29F4G16ABCWC:C is quite simple. It records data in the form of electrical charges, which are stored in cells as bits of information. A NAND Flash memory array typically consists of a certain number of cells made from layers of material, such as polysilicon, that can be programmed and erased thousands of times without any data loss. These cells are arranged in a regular matrix and data is stored in the form of bits. For each bit of information, the memory array stores one byte of data.
The advanced ECC system of MT29F4G16ABCWC:C is unique in its ability to store multiple bits of data in each cell and detect errors in the stored data. The ECC system also performs a number of other functions that help to ensure reliable data storage and retrieval, such as: coding, interleaving, error detection and correction, and wear leveling. This advanced ECC system improves the reliability of the storage device and helps to ensure that stored information remains intact and safe, even when the device is subjected to extreme environmental conditions.
MT29F4G16ABCWC:C is a high-performance, non-volatile memory solution designed to meet the needs of embedded applications. It has a very high endurance rating and is capable of providing a high level of data security. The optimized command set, wide range of advanced features, and advanced ECC system make MT29F4G16ABCWC:C one of the most powerful and reliable NAND Flash memory solutions on the market.
The specific data is subject to PDF, and the above content is for reference
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MT29F2G01ABAGDSF-IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI 16SOPFLAS... |
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MT29F2G08AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
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MT29F4G16ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G16ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
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