| Allicdata Part #: | MT29F512G08CUCABH3-12ITZ:A-ND |
| Manufacturer Part#: |
MT29F512G08CUCABH3-12ITZ:A |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 512G PARALLEL 100LBGA |
| More Detail: | FLASH - NAND Memory IC 512Gb (64G x 8) Parallel 83... |
| DataSheet: | MT29F512G08CUCABH3-12ITZ:A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 512Gb (64G x 8) |
| Clock Frequency: | 83MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 100-LBGA |
| Supplier Device Package: | 100-LBGA (12x18) |
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Memory is essential for any electronic system. There are many types of memory, with different specifications and uses. One of the most popular is MT29F512G08CUCABH3-12ITZ. This is a 3-dimensional NAND flash memory which is a high-density, low-power memory ideal for embedded applications.
The MT29F512G08CUCABH3-12ITZ is a 3D stack of 512GB with a high-capacity single 8Gb chip. It is organized as two double data rate (DDR2) buses, an 8kb cache buffer and an ECC area. It provides a fast data transfer rate of up to 500MB/s, making it a great choice for applications that require high-speed performance. With a low power consumption of only 40mW, it is also a great choice for battery-powered applications.
The MT29F512G08CUCABH3-12ITZ can be used in a variety of applications. It is often used in automotive applications such as infotainment and navigation systems, as well as in IoT, networking, and communications applications. With its fast data transfer rate, high memory density and low power consumption, it is well suited for these applications.
The MT29F512G08CUCABH3-12ITZ uses an open NAND flash architecture which allows for fast, efficient write and read operations. The memory is divided into two bit cells, each with its own latch, which is responsible for holding the bit data. For read operations, the two bit cells are accessed simultaneously, and then the data is read out of the memory. For write operations, the write cycle is first started and the data is then written to both bit cells. The data is then written to the memory and the write cycle is completed. This architecture allows for a fast and reliable write and read operations.
The MT29F512G08CUCABH3-12ITZ also features built-in ECC protection, which helps to ensure data integrity and reliable operation. The ECC area is used to store information related to any errors that occur during the write or read operations. This helps to ensure the data is always valid and reliable. This makes the memory a great choice for mission-critical applications where data integrity is of utmost importance.
In conclusion, the MT29F512G08CUCABH3-12ITZ is a high-performance, low-power memory solution for embedded applications. With its fast data transfer rate, high memory density, and built-in ECC protection, it is well suited for a variety of automotive, IoT, networking, and communications applications. It is a great choice for mission-critical applications where data integrity is of utmost importance.
The specific data is subject to PDF, and the above content is for reference
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MT29F512G08CUCABH3-12ITZ:A Datasheet/PDF