
Allicdata Part #: | MT29F512G08EMCBBJ5-10:B-ND |
Manufacturer Part#: |
MT29F512G08EMCBBJ5-10:B |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512G PARALLEL 100MHZ |
More Detail: | FLASH - NAND Memory IC 512Gb (64G x 8) Parallel 10... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 512Gb (64G x 8) |
Clock Frequency: | 100MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
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Memory is an important component of modern computer systems that stores data and information. MT29F512G08EMCBBJ5-10:B is a type of memory component that is widely used in the electronics industry for storing data and information. This article will discuss the application field and working principles of MT29F512G08EMCBBJ5-10:B.
Application Field
MT29F512G08EMCBBJ5-10:B is widely used in the automotive industry. This memory component is used in advanced driver assistance systems (ADAS) such as lane departure warning systems, collision avoidance systems, parking assistance systems, and blind spot detectors. MT29F512G08EMCBBJ5-10:B is also used in other automotive systems such as in-vehicle infotainment (IVI) systems and telematics systems. Outside of the automotive industry, MT29F512G08EMCBBJ5-10:B is also used in consumer electronics such as smartphones, tablets, and laptops. It is also used in embedded systems such as industrial control systems, medical device systems, and robotics systems.
Working Principle
MT29F512G08EMCBBJ5-10:B is a type of NAND Flash-based non-volatile memory component. It consists of multiple interconnected NAND cells that are used to store data and information. The memory is able to retain data and information even when the power is switched off. The memory has a minimum write endurance of 1,000 write/erase cycles and data retention for up to 20 years. It has a random read speed of up to 1 Gbits/s and a sequential read speed of up to 2 Gbytes/s. The memory is also able to handle the transformation of data and information between the memory components of a computer system.
MT29F512G08EMCBBJ5-10:B is also a low-power memory component that is designed to be power efficient. It is able to achieve low active/idle power consumption and reliable data integrity with advanced power management features such as data retention, power loss protection, and adaptive voltage scaling. The memory is designed with a Shock and Vibration Resistance Technology that protects the memory from high levels of shock and vibration.
In summary, MT29F512G08EMCBBJ5-10:B is a widely used NAND Flash-based non-volatile memory component that is used in a variety of applications from automotive to consumer electronics to embedded systems. It is designed to provide reliable data and information storage and is power efficient with advanced power management features.
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