| Allicdata Part #: | MT29F64G08CBABAL84A3WC1-ND |
| Manufacturer Part#: |
MT29F64G08CBABAL84A3WC1 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | MLC 64G DIE 8GX8 |
| More Detail: | Memory IC |
| DataSheet: | MT29F64G08CBABAL84A3WC1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Active |
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MT29F64G08CBABAL84A3WC1, or MT29F64G08CBABAL, is an 8-Gigabit NAND Flash memory component designed primarily for use in consumer electronic products. It is part of the MT29F series of NAND Flash memories, and is distinctively a multi-level cell (MLC) device. This component is widely used in a variety of consumer electronics, including cameras, portable media players, and gaming devices. The component is also used in computers and other types of data storage systems.
Application field
MT29F64G08CBABAL is primarily used as a non-volatile random access memory component in consumer electronics. It offers significant data storage and retrieval capabilities for a variety of devices. It is ideal for devices with limited memory requirements, such as cameras and gaming devices. Additionally, this component offers minor storage and retrieval capabilities for devices with larger storage needs, such as computers and other data storage systems.
The component is designed to provide reliable data storage and retrieval performance even in a variety of environmental conditions. This component offers optimal data protection and performance even in high-temperature environments of up to 85 degrees Celsius (185 degrees Fahrenheit).
The component is designed to consume a very low amount of power, making it ideal for use in portable devices. It consumes less than 0.9 milliwatts of power when in operation, and even less when idle. Additionally, this component is designed to be resistant to voltage fluctuations, ensuring reliable data storage and retrieval performance even during fluctuations of up to 6 volts.
Working Principle
MT29F64G08CBABAL utilizes a NAND-based architecture to store and retrieve data. This type of architecture uses a variety of digital logic circuits to process data in 8-bits (which is called \'words\') of information at a time. This component is designed to retrieve data at a maximum speed of 633 Mbps.
This component uses an advanced technology called a \'multi-level cell\' (MLC) to store a maximum of 8 cells of information on the data bit-line. This type of memory architecture utilizes a variety of digital logic gates to store and retrieve the data. The advantage of using this type of architecture is that it can store more information than a single-level cell (SLC) architecture, but can still be reliable and consistent.
The component is designed to provide superior data protection, even in harsh environmental conditions. It is equipped with a variety of technologies that protect data from power surges and other types of interference. It also has an on-chip error correction algorithm that can detect and correct errors in the data stored by the device. Additionally, the device is equipped with a built-in erase monitor, to ensure uniform erasing of the memory cells.
MT29F64G08CBABAL utilizes an advanced packaging technology called package-on-package (PoP) to increase its storage and retrieval capabilities. This technology combines the logic circuitry and memory cells on a single chip, offering superior data access and storage performance. Additionally, the PoP technology offers a superior thermal dissipation capability, which translates into longer life and better performance.
Conclusion
MT29F64G08CBABAL is a popular 8-Gigabit NAND Flash memory component widely used in consumer electronics, computers and other data storage systems. It offers significant data storage and retrieval capabilities for a variety of applications. The component is designed to protect data from power surges and interference, and offers superior performance in rugged conditions. Additionally, it uses a package-on-package technology to reduce space requirements and offer superior thermal dissipation.
The specific data is subject to PDF, and the above content is for reference
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| MT29E1T208ECHBBJ4-3:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1.125T PARALLEL ... |
| MT29F4G08BABWP-ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
| MT29C1G12MAADAEAKC-6 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 107... |
| MT29F2G08ABBEAHC:E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F2G16ABBEAHC:E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F8G08ADADAH4-IT:D | Micron Techn... | -- | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F8G16ABBCAH4-IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F4G08ABAEAWP-IT:E | Micron Techn... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F128G08CECABH1-12Z:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 10... |
| MT29F256G08CJAAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
| MT29F128G08CEEDBJ4-12:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 83... |
| MT29F256G08CBCBBWP-10M:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
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| MT29F8G08FACWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
| MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
| MT29F1G08ABCHC:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29C1G12MAACYAML-5 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 153... |
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MT29F64G08CBABAL84A3WC1 Datasheet/PDF