| Allicdata Part #: | MT29F64G08CECCBH1-12ITZ:C-ND |
| Manufacturer Part#: |
MT29F64G08CECCBH1-12ITZ:C |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 64G PARALLEL 100VBGA |
| More Detail: | FLASH - NAND Memory IC 64Gb (8G x 8) Parallel 83MH... |
| DataSheet: | MT29F64G08CECCBH1-12ITZ:C Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 64Gb (8G x 8) |
| Clock Frequency: | 83MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 100-VBGA |
| Supplier Device Package: | 100-VBGA (12x18) |
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Memory is an important category of data storage devices. The MT29F64G08CECCBH1-12ITZ:C is an example of a memory device. It is a memory device with high read speed, high reliability, and a low power consumption. This article will discuss the application field and working principle of the MT29F64G08CECCBH1-12ITZ:C.
The MT29F64G08CECCBH1-12ITZ:C is a 64Gb NAND flash memory device. It is designed for use in a variety of applications. It has a fast page read speed of up to 90Mb/s, which makes it ideal for applications that require fast data access. It also has a high degree of reliability, with a maximum endurance of 10,000 program/erase cycles. The device is also low power, with a power consumption of only 20mW, making it suitable for battery-powered devices.
The MT29F64G08CECCBH1-12ITZ:C has a variety of applications. It is often used in portable electronic devices, such as digital cameras and music players. It is also used in automotive and other industrial equipment, where high reliability and low power consumption are important factors. The device is also used in many consumer electronic devices, such as digital TV receivers and set-top boxes.
The working principle of the MT29F64G08CECCBH1-12ITZ:C is based on NAND flash memory technology. NAND flash memory is a type of non-volatile memory that stores data in individual cells. Each cell contains two transistors and one capacitor. When a voltage is applied to the cell, electrons are freed from the capacitor and stored in a floating gate. When the voltage is removed, the electrons remain in the floating gate and the capacitor is left empty. This process allows the memory cells to keep their state even when power is not applied.
The MT29F64G08CECCBH1-12ITZ:C can be programmed and erased using a special device, such as a Flash programmer. The device is programmed using a process called “page programming”. In this process, one page of data is written to the memory cell. The device can then be erased using another process, called “block erasing”. This process erases an entire block of memory cells, instead of just one page.
In conclusion, the MT29F64G08CECCBH1-12ITZ:C is a memory device with a high read speed, high reliability, and low power consumption. It is designed for use in a variety of applications, such as portable electronic devices, automotive equipment, and consumer electronics. It works on the basis of NAND flash memory technology, which allows it to store data even when power is not applied. It can be programmed and erased using a Flash programmer.
The specific data is subject to PDF, and the above content is for reference
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MT29F64G08CECCBH1-12ITZ:C Datasheet/PDF