Allicdata Part #: | MT29PZZZ4D4BKESK-18W.94HTR-ND |
Manufacturer Part#: |
MT29PZZZ4D4BKESK-18 W.94H TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | MOD EMMC NAND 4GB 162VFBGA |
More Detail: | Memory IC |
DataSheet: | MT29PZZZ4D4BKESK-18 W.94H TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
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The MT29PZZZ4D4BKESK-18 W.94H TR is a 4-gigabit NAND Flash memory type that can be used in various memory applications. It is often used in mobile applications such as smartphones and tablets as well as embedded systems. It also has capabilities suitable for industrial and automotive applications. The MT29PZZZ4D4BKESK-18 W.94H TR has a fast read access time, up to 135MHz. It also has a long-life, with 10,000 program/erase cycles. It has a low power consumption vs. other types of Flash memory.
The MT29PZZZ4D4BKESK-18 W.94H TR can be used in a variety of applications, due to its impressive performance and reliability. It is especially useful for applications that require secure data storage, such as encrypted payment and financial information. It is also suited for use in applications such as industrial controllers, automotive infotainment, and internet of things (IoT) devices. Additionally, it can be used for storage for BluRay players, digital televisions, and set-top boxes.
The working principle of the MT29PZZZ4D4BKESK-18 W.94H TR is based on non-volatile NAND Flash technology. It works by storing digital data electrically, rather than magnetically like conventional memories. NAND Flash memory is composed of cells that are programmed and erased with electrical charges. This memory is much faster than conventional, mechanical memories as the data can be read and written quickly and efficiently.
The MT29PZZZ4D4BKESK-18 W.94H TR uses a multi-level cell (MLC) architecture. MLC stores more than one bit of data in each cell, allowing for higher storage density than single-level cell (SLC) architectures. It also features wear leveling, which ensures that data is evenly distributed in memory, preventing cells from wearing out too quickly. Finally, the device has advanced error correction code (ECC) which detects and corrects certain types of errors, adding to the device’s reliability.
Overall, the MT29PZZZ4D4BKESK-18 W.94H TR is a reliable, low-power Flash memory type with impressive performance. Its ideal applications and capabilities make it suitable for use in many types of memory applications. It is suitable for use in mobile applications such as smartphones and tablets, as well as for secure data storage applications. It is also useful for a variety of industrial, automotive, and IoT applications. The MT29PZZZ4D4BKESK-18 W.94H TR uses NAND Flash technology which is electrical rather than magnetic, allowing for faster and more efficient data storage. Its multi-level cell architecture, wear leveling, and ECC further add to its reliability, allowing it to be used in critical applications.
The specific data is subject to PDF, and the above content is for reference
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MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
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MT29F4G16ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
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MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
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