Allicdata Part #: | MT29PZZZ8D4BKFSK-18W.94LTR-ND |
Manufacturer Part#: |
MT29PZZZ8D4BKFSK-18 W.94L TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | MOD EMMC NAND 4GB 162VFBGA |
More Detail: | Memory IC |
DataSheet: | MT29PZZZ8D4BKFSK-18 W.94L TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
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Memory is a computer component used to store data and program. It stores data internally so that they are accessible at any point in time. The most common types of memory are random access memory (RAM) and read-only memory (ROM). This article will discuss the application field and working principle of a particular type of memory, MT29PZZZ8D4BKFSK-18 W.94L TR.
MT29PZZZ8D4BKFSK-18 W.94L TR is a type of dynamic random access memory (DRAM), which is widely used in modern computers as the main memory. DRAM stores data as electric charge in capacitors, unlike the older memory types, which use magnetism. DRAM is volatile, meaning that the storage state only persists when supplied with power.
MT29PZZZ8D4BKFSK-18 W.94L TR is a high-speed, high-efficiency, low power consumption DRAM, suitable for use in high-end consumer electronics, industrial control, automotive electronics, cloud computing, and other fields. It supports deep sleep (DSTB), self-refresh (SR), precharge (PRE), and partial array self-refresh (PASR), significantly reducing power consumption. It also supports high transfer rate of 1066 megabits per second (Mbps). Moreover, it operates at a lower voltage than other types of DRAM, making it suitable for applications requiring low power consumption.
The working principle of MT29PZZZ8D4BKFSK-18 W.94L TR involves storing a bit of data as an electrical charge in a separate capacitor. To read the data, a sense amplifier is used to detect the charge and convert it into an electrical signal that can be read by the device. To write data, a signal is used to apply a charge to the desired capacitor, thereby storing the data.
This type of memory has a number of advantages over other types of memory, such as its low power consumption, high speed, and high efficiency. Additionally, as DRAM is typically constructed with integrated circuits, it is smaller and more compact than other types of memory. This makes it suitable for use in applications where space is limited.
In conclusion, MT29PZZZ8D4BKFSK-18 W.94L TR is a type of dynamic random access memory that is suitable for a wide range of applications due to its low power consumption, high speed, and high efficiency. It works by storing a bit of data as an electric charge in capacitors and using a sense amplifier to convert the charge into a readable signal.
The specific data is subject to PDF, and the above content is for reference
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MT29F4G08ABADAWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F8G16ABBCAH4:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
MT29F32G08CBADAWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32G PARALLEL 48T... |
MT29F64G08CFACAWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
MT29F1G08ABBFAH4-ITE:F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F2G01ABAGDSF-IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI 16SOPFLAS... |
MT29F2G08ABAEAH4-IT:E | Micron Techn... | -- | 3476 | IC FLASH 2G PARALLEL 63VF... |
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44B5121-16-MT29C1401-L302 | TE Connectiv... | 2.14 $ | 1000 | 44B5121-16-MT29C1401-L302 |
MT29F1G08ABAEAH4:E TR | Micron Techn... | 1.91 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F2G08ABAEAH4:E TR | Micron Techn... | 3.17 $ | 5000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08ABAEAWP-IT:E TR | Micron Techn... | 3.88 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F64G08AFAAAWP-ITZ:A TR | Micron Techn... | 40.25 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
EPD5955-22-MT29C1693L016 | TE Connectiv... | 1.09 $ | 1000 | 55A CABLE/SINGLE WALLCond... |
MT29F2G08AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G16ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
MT29F16G08MAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
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