Allicdata Part #: | MT29RZ1CVCZZHGTN-25W.4M0TR-ND |
Manufacturer Part#: |
MT29RZ1CVCZZHGTN-25 W.4M0 TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 1.5G DDR |
More Detail: | Memory IC |
DataSheet: | MT29RZ1CVCZZHGTN-25 W.4M0 TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MT29RZ1CVCZZHGTN-25 W.4M0 TR is a member of a new line of mid-capacity memory solutions from Micron, offering fast and reliable storage solutions for a variety of applications.
This memory is an innovative 2.5-inch form factor with a standard thickness of 25mm. It is a quad-level cell format that can store up to 24GB of data per cell, making it suitable for enterprise storage applications.
This memory is designed for reliability, with a 5X power cycle rating that ensures the device will still operate even in the most extreme operating conditions. The device also comes with integrated multi-layer layered error correction code (ECC) for improved performance and reliability.
This memory uses a dual-core architecture that enables data to be transferred quickly between the main memory and the controller. It is designed for maximum efficiency, with low power consumption and heat dissipation. In addition, it also has a low power standby mode that can be used when the host is not actively accessing the data.
This memory is also optimized for enterprise storage solutions, with support for RAID 0 and 5. It is also optimized for enterprise applications, with features such as secure erase, self healing, and intelligent media access management.
In terms of its working principle, MT29RZ1CVCZZHGTN-25 W.4M0 TR operates on a hybrid memory architecture. This architecture combines SDRAM and NAND Flash memory, with the non-volatile NAND Flash memory being used for persistence. The NAND Flash memory is used for fast data access and for data moving services, while the SDRAM is used for data read/write operations. The combination of the two memory solutions enables fast data access and low power consumption, making it an ideal solution for enterprise storage applications.
This memory can be used in a variety of applications, from data centers to embedded systems. It is an ideal solution for a range of applications, from enterprise storage to multimedia applications. This memory solution can be used for various tasks, such as real-time media streaming and video processing. Its low power consumption and fast access makes it suitable for embedded systems, such as those used in cameras and medical imaging applications.
Overall, MT29RZ1CVCZZHGTN-25 W.4M0 TR is an ideal memory solution for a range of applications, offering fast and reliable storage with low power consumption. Its hybrid memory architecture enables fast data access, and its integrated error correction ensures that data is stored securely. Its low power standby mode is ideal for enterprise storage applications. This memory is an ideal solution for a wide range of applications, from enterprise storage to embedded systems.
The specific data is subject to PDF, and the above content is for reference
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MT29F1G08ABBFAH4-ITE:F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F2G01ABAGDSF-IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI 16SOPFLAS... |
MT29F2G08ABAEAH4-IT:E | Micron Techn... | -- | 3476 | IC FLASH 2G PARALLEL 63VF... |
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MT29F2G08ABAEAH4:E TR | Micron Techn... | 3.17 $ | 5000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08ABAEAWP-IT:E TR | Micron Techn... | 3.88 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F64G08AFAAAWP-ITZ:A TR | Micron Techn... | 40.25 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
EPD5955-22-MT29C1693L016 | TE Connectiv... | 1.09 $ | 1000 | 55A CABLE/SINGLE WALLCond... |
MT29F2G08AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G16ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
MT29F16G08MAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
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