Allicdata Part #: | MT29TZZZ7D6JKKFB-107W.96VTR-ND |
Manufacturer Part#: |
MT29TZZZ7D6JKKFB-107 W.96V TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | MLC EMMC/LPDDR3 152G |
More Detail: | Memory IC |
DataSheet: | MT29TZZZ7D6JKKFB-107 W.96V TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory
MT29TZZZ7D6JKKFB-107 W.96V TR is an integral component of modern computer systems, and is extensively employed in the fields of gaming, business, engineering, bioinformatics, and scientific research. As its name implies, the device acts as a sense amplifier that allows for increased read/write performance, along with a higher level of data transfer. The devices can also be used to store information and documents on a permanent basis.
Technical Specifications
The exact technical specifications of the MT29TZZZ7D6JKKFB-107 W.96V TR vary depending on the manufacturer, but broadly speaking the device is capable of performing data transfers up to 9.6 GB/sec, with a read/write latency of 1.4 microseconds and a 30TB endurance rating. The device is also capable of supporting up to 72 bits/cell data storage, allowing for 3,333,600 bytes of data to be stored using a single NAND chip.
Working Principle and Operation
MT29TZZZ7D6JKKFB-107 W.96V TR works on the principle of a NAND gate, which is a type of electronic circuit that allows for the storage of data in a non-volatile manner. A NAND gate is essentially a digital logic gate that is used to store digital data on a NAND flash memory chip. The device also works by utilizing an array of transistors that control the reading and writing of data between the chip and the processor.
In operation, the MT29TZZZ7D6JKKFB-107 W.96V TR works by storing the data on a series of NAND flash memory chips, with each chip having a unique memory address. The device then works by connecting to the processor, providing data with a read/write latency of 1.4 microseconds. By utilizing the NAND gates, data can be accessed from the device in a read/write manner whenever needed, with the device being able to store up to 3,333,600 bytes of data for use.
Application Fields
One of the most popular applications for MT29TZZZ7D6JKKFB-107 W.96V TR is in gaming systems. It is widely used in contemporary gaming systems, with its fast read/write latencies providing gamers with an improved experience. Additionally, the device is often employed in business applications, engineering projects, and scientific research due to its speed and reliable storage capabilities. Furthermore, MT29TZZZ7D6JKKFB-107 W.96V TR also has numerous applications in bioinformatics and other fields of study, with its versatile nature making it well suited for such uses.
In summary, the MT29TZZZ7D6JKKFB-107 W.96V TR is a popular memory device that is employed in a wide variety of applications. The device is capable of performing data transfers up to 9.6 GB/sec, with a read/write latency of 1.4 microseconds and a 30TB endurance rating. Additionally, the device is widely used in gaming, business, engineering, bioinformatics, and scientific research, with its versatile nature making it well suited for such uses.
The specific data is subject to PDF, and the above content is for reference
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MT29F2G01ABAGDSF-IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI 16SOPFLAS... |
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MT29F2G08AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G16ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
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