Allicdata Part #: | MT29TZZZAD7EKKCY-107W.97WTR-ND |
Manufacturer Part#: |
MT29TZZZAD7EKKCY-107 W.97W TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | 256MX8/128MX16 MCP PLASTIC 1.8V |
More Detail: | Memory IC |
DataSheet: | MT29TZZZAD7EKKCY-107 W.97W TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
。MT29TZZZAD7EKKCY-107 W.97W TR Memory Application Field and Working Principle
MT29TZZZAD7EKKCY-107 W.97W TR is a type of advanced flash memory technology based on 3D Vertical NAND architecture for higher densities, improved performance, and enhanced reliability compared with 2D NAND. It combines TLC NAND with a custom 3D architecture. The 3D V-NAND also utilizes a single-plane ECC, resulting in higher endurance than MLC NAND. Compared with conventional MLC NAND, the MT29TZZZAD7EKKCY-107 W.97W TR memory is built with more layers, making it extremely powerful, dependable and reliable.
The MT29TZZZAD7EKKCY-107 W.97W TR memory uses the best combination of components for efficiency, reliability and performance. The chip includes standard 1xnm, 2xnm and 3xnm memory thickness layers and a parallel array architecture. Each layer contains connection points, allowing data transfer within each layer and between layers. This data is then transmitted through the internal controller, which is responsible for address allocation and data compression.
The MT29TZZZAD7EKKCY-107 W.97W TR memory also utilizes advanced withstanding error control algorithms such as LDPC (low-density parity checking) and ECC-based protection. These algorithms detect and correct bit errors occurring during storage and transmission, ensuring reliable storage and transmission of data.
The primary application fields of MT29TZZZAD7EKKCY-107 W.97W TR memory consists of automotive electronics, smartphones, enterprise systems, tablets, digital cameras, Internet of Things (IoT), smart television, and removable media. It is widely used for storing and transferring large files, high definition audio and video, HD photos, gaming applications and data manipulation.
MT29TZZZAD7EKKCY-107 W.97W TR memory is an innovation that offers many advantages such as improved performance, reliability and power efficiency. The most beneficial feature of this product is its compatibility with different systems. It can easily be integrated into existing systems and can easily adapt to their performance needs. The product is able to maintain data integrity despite its low write energy levels and can safely store large amounts of data.
MT29TZZZAD7EKKCY-107 W.97W TR memory is a cost-effective solution for storage, transfer and data manipulation. Its combination of advanced technology and reliability makes it an excellent choice for customers. As with any new technology, it is important to ensure that the product is properly installed and maintained to ensure its performance.
The specific data is subject to PDF, and the above content is for reference
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MT29F4G08ABADAWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
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MT29F32G08CBADAWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32G PARALLEL 48T... |
MT29F64G08CFACAWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
MT29F1G08ABBFAH4-ITE:F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F2G01ABAGDSF-IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI 16SOPFLAS... |
MT29F2G08ABAEAH4-IT:E | Micron Techn... | -- | 3476 | IC FLASH 2G PARALLEL 63VF... |
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MT29F2G08ABAEAH4:E TR | Micron Techn... | 3.17 $ | 5000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08ABAEAWP-IT:E TR | Micron Techn... | 3.88 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
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EPD5955-22-MT29C1693L016 | TE Connectiv... | 1.09 $ | 1000 | 55A CABLE/SINGLE WALLCond... |
MT29F2G08AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G16ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
MT29F16G08MAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
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