MT29VZZZ7C8DQFSL-046 W.9J8 TR Allicdata Electronics
Allicdata Part #:

MT29VZZZ7C8DQFSL-046W.9J8TR-ND

Manufacturer Part#:

MT29VZZZ7C8DQFSL-046 W.9J8 TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: 536G
More Detail: Memory IC
DataSheet: MT29VZZZ7C8DQFSL-046 W.9J8 TR datasheetMT29VZZZ7C8DQFSL-046 W.9J8 TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Active
Description

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Memory Application Field and Working Principle

Memory, broadly defined as the capability of storing and using information, is a term that essentially applies to all IT systems. Computer memory is the storage of data within a computer system, which is used to ensure the system can efficiently access and modify data. Memory is a core element of the functionality of a computer system, as it holds the data required to execute programs and make sure the processor can access that data each time it requires it. The capabilities of a computer system are often referred to in terms of its memory size and memory type.

The MT29VZZZ7C8DQFSL-046 W.9J8 TR is a type of memory commonly used in computer systems. This type of memory belongs to the non-volatile memory category, which is a class of memory that does not require power to retain stored data. This technology, which provides an expected life span of ten years, is commonly used in applications such as embedded, automotive, and industrial applications.

How it Works

The MT29VZZZ7C8DQFSL-046 W.9J8 TR works by utilizing a special type of non-volatile memory technology known as Charge Trap Flash (CTF). CTF works by trapping electrons in an oxide layer between the control and storage gate of a flash cell. They are then released and collected by a substrate layer beneath the oxide, which passes the electric field to the Write path. This electric field then modifies the charge inside the trap, which is equivalent to writing data to the memory.

CTF technology also provides an extra advantage in that it requires significantly less space and power than other non-volatile memory solutions, making it ideal for embedded designs. Additionally, this type of memory provides faster write speeds and improved performance than other solutions. This makes the MT29VZZZ7C8DQFSL-046 W.9J8 TR an excellent choice for applications that require a high level of memory performance.

Advantages of MT29VZZZ7C8DQFSL-046 W.9J8 TR

The MT29VZZZ7C8DQFSL-046 W.9J8 TR holds several advantages over traditional non-volatile memory solutions. These advantages include:

  • Superior storage density - since CTF technology traps electrons in a smaller space than other solutions, the MT29VZZZ7C8DQFSL-046 W.9J8 TR provides greater storage capacity in a smaller package.
  • Lower power consumption – CTF technology requires less power than other storage solutions, making the MT29VZZZ7C8DQFSL-046 W.9J8 TR ideal for applications that require low power-consumption.
  • Increased durability – the MT29VZZZ7C8DQFSL-046 W.9J8 TR is designed for greater durability so it can withstand extreme temperatures, shock, vibration and other environmental conditions.
  • Versatility – the MT29VZZZ7C8DQFSL-046 W.9J8 TR can be used in a variety of applications such as embedded, automotive and industrial.

Conclusion

The MT29VZZZ7C8DQFSL-046 W.9J8 TR is a type of non-volatile memory technology that features superior storage density, lower power consumption, increased durability and versatility. This makes it an excellent choice for applications that require a high level of memory performance. With its advanced CTF Technology, the MT29VZZZ7C8DQFSL-046 W.9J8 TR provides a solution to a wide range of IT systems.

The specific data is subject to PDF, and the above content is for reference

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