| Allicdata Part #: | MT29VZZZ7D7DQKWL-053W.97Y-ND |
| Manufacturer Part#: |
MT29VZZZ7D7DQKWL-053 W.97Y |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | MLC EMMC/LPDDR3 280G |
| More Detail: | Memory IC |
| DataSheet: | MT29VZZZ7D7DQKWL-053 W.97Y Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Active |
| Mounting Type: | Surface Mount |
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Memory has been integral to the functionality of computers since their beginnings. One type of memory, called NAND Flash memory, has become increasingly popular in recent years due to its advantages over classical memory in terms of speed, power consumption, and cost efficiency. One example of NAND Flash memory is the MT29VZZZ7D7DQKWL-053 W.97Y.
The MT29VZZZ7D7DQKWL-053 W.97Y is a standard single-level cell (SLC) NAND Flash memory device that can store up to 32GB of data. It is a non-volatile memory, meaning it does not require an external power source to retain its data. The device offers an impressive write speed of up to 10 MB/s, as well as a read speed of up to 30MB/s. The MT29VZZZ7D7DQKWL-053 W.97Y uses a 4-bit/cell architecture, meaning that each cell can store 4 bits of data. This allows for a higher level of data storage density than other forms of NAND flash memory, resulting in a smaller overall package size.
Due to its speed, power efficiency, and cost effectiveness, the MT29VZZZ7D7DQKWL-053 W.97Y is most commonly used for small to medium-sized applications that require fast read/write operations and require a high degree of reliability. Examples of such applications include digital cameras, digital video recorders, and solid state hard drives. The device can also be used for data archiving, as its non-volatile memory will not be lost in the event of a power outage.
The working principle of the MT29VZZZ7D7DQKWL-053 W.97Y is relatively straightforward. The device utilizes NAND Flash cells to store data. Each cell can store four bits of data, and there are 64 cells in each block. These blocks can then be divided into logical blocks to form pages, which are 4 KB in size. Data is written to these pages by applying an electric charge to a portion of the cell. This charge changes the threshold voltage of that cell, which is then detected and converted into bits. Data can then be read from the same cell by detecting its threshold voltage.
The MT29VZZZ7D7DQKWL-053 W.97Y is an excellent example of a NAND Flash memory device. It offers fast read/write speeds and is non-volatile, making it ideal for a variety of applications. Its 4-bit/cell architecture also allows for a high level of data density. It is an ideal choice for applications that require fast read/write operations, such as digital cameras and data archiving.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| MT29F256G08CECCBH6-6R:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 16... |
| MT29F2T08CUHBBM4-3R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 333M... |
| MT29F512G08CKCBBH7-6C:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 16... |
| MT29F256G08EFEBBWP:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
| MT29F64G08ABEBBH6-12:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 83M... |
| MT29F8G01ADBFD12-AATES:F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G SPI TBGAFLASH... |
| MT29E1T208ECHBBJ4-3:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1.125T PARALLEL ... |
| MT29F4G08BABWP-ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
| MT29C1G12MAADAEAKC-6 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 107... |
| MT29F2G08ABBEAHC:E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F2G16ABBEAHC:E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F8G08ADADAH4-IT:D | Micron Techn... | -- | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F8G16ABBCAH4-IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F4G08ABAEAWP-IT:E | Micron Techn... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F128G08CECABH1-12Z:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 10... |
| MT29F256G08CJAAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
| MT29F128G08CEEDBJ4-12:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 83... |
| MT29F256G08CBCBBWP-10M:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
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| MT29F16G08ABCBBH1-12AIT:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 83M... |
| MT29F8G08FACWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
| MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
| MT29F1G08ABCHC:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29C1G12MAACYAML-5 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 153... |
| MT29F2G08ABBEAH4:E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F64G08AECABH1-10:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 100... |
| MT29F64G08CECCBH1-12IT:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 100... |
| MT29F1G16ABBDAHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29F4G16ABAEAH4:E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29F8G16ABACAH4:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 63VF... |
| MT29F256G08CKCBBH2-10:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
| MT29F256G08AKEBBK7-12:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 83... |
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MT29VZZZ7D7DQKWL-053 W.97Y Datasheet/PDF