Allicdata Part #: | MT29VZZZBD8DQOPR-053WES.9G8TR-ND |
Manufacturer Part#: |
MT29VZZZBD8DQOPR-053 W ES.9G8 TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | ALL IN ONE MCP 560G |
More Detail: | Memory IC |
DataSheet: | MT29VZZZBD8DQOPR-053 W ES.9G8 TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
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Memory is a vital part of a computer\'s performance and more so in the high-performance computing field. MT29VZZZBD8DQOPR-053WES.9G8TR is a type of memory that offers higher performance and greater capacity compared to other types of memory. This article will provide an overview of the memory\'s application field and working principle.
Application Field
MT29VZZZBD8DQOPR-053WES.9G8TR memory is used in a variety of applications, from high-end gaming to data storage and experience cloud computing. In particular, this type of memory is increasingly being used in embedded systems, such as mobile phones and cameras. The reason for this is that the memory can enable faster loading times, improved image quality and smoother transitions.
Working Principle
From a technical perspective, MT29VZZZBD8DQOPR-053WES.9G8TR memory works by combining DRAM (Dynamic Random Access Memory) and NAND Flash into a single chip. This allows the memory to operate at a significantly faster speed than a single DRAM chip. This memory is also designed to be more energy-efficient than many of the other types of memory available today.
The MT29VZZZBD8DQOPR-053WES.9G8TR memory chip is composed of 8-gigabit NAND flash memory, each die having a capacity of 128 Gigabytes (GB). The chip also includes a multi-level cell controller that enables the use of multiple bits in a single memory cell. This is important for producing high-speed, high-capacity memory.
The chip also utilizes error correction code (ECC) algorithms to ensure the integrity of data stored in the memory. This feature is especially useful for applications such as cloud-based services, where data redundancy and accurate data recovery is necessary.
Conclusion
MT29VZZZBD8DQOPR-053WES.9G8TR memory is a type of high-performance memory designed to meet the needs of high-end computing applications. Through its combination of DRAM and NAND Flash, and its energy-efficiency features, it makes for a versatile memory solution. In addition, its error correction coding algorithms make it suitable for use in cloud-based applications.
The specific data is subject to PDF, and the above content is for reference
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MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
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MT29F4G16ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G16ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
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