MUN2214T1G Discrete Semiconductor Products |
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Allicdata Part #: | MUN2214T1GOSTR-ND |
Manufacturer Part#: |
MUN2214T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 230MW SC59 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MUN2214T1G Datasheet/PDF |
Quantity: | 21000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 230mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
Base Part Number: | MUN2214 |
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The MUN2214T1G is a single, pre-biased bipolar junction transistor (BJT) specifically designed and manufactured by Microchip Technology. This transistor is primarily used to switch and control circuits. It is constructed using high-grade silicon, ensuring excellent long-term reliability and performance. In addition, its proven package design allows it to be placed directly onto a user-supplied printed circuit board without additional hardware or components.
A BJT is a type of active device that consists of three layers of doped silicon. The three layers form a p-n-p or n-p-n junction and when a small current (base current) is applied, the collector-emitter current starts flowing. This current can be controlled and varied depending on the base current and the resistance of the collector-emitter path.
The MUN2214T1G is designed to be pre-biased which offers several advantages over traditional BJTs that require external circuit elements to achieve biasing conditions. Pre-biased transistors are faster and can be easily implemented in circuits without the need for additional design elements. The MUN2214T1G uses proven Microchip Technology integrated circuit technology to ensure excellent performance and long-term reliability.
The MUN2214T1G transistor has a collector-emitter voltage of 60 Volts and is rated for approximately 400 milliAmps of collector current. It has a collector-emitter saturation voltage of 250mV with a minimum guaranteed gain of at least 100. It also includes an integrated protection diode between the collector and emitter leads, helping to protect the attached circuit should an overload condition occur.
The MUN2214T1G is well suited for low-noise switched control applications where the low-off switching noise of the pre-biased transistor makes it an ideal choice for scenarios where a high level of precision and control is desired. Its high-performance switching characteristics also make it suitable for fast switching, low-noise control, and precision analog-to-digital or digital-to-analog conversion applications.
In addition to its excellent performance, the MUN2214T1G is manufactured using Microchip\'s proven vertical structure technology. This technology helps to ensure an even more reliable product as it reduces the amount of impurities that can enter the transistor\'s structure and can extend the life of the transistor. The pre-biased design also helps to reduce manufacturing costs by reducing the need for external bias circuits.
The MUN2214T1G is the perfect choice for applications requiring high-performance switching, low-noise control, and reliable performance over an extended period of time. Its advanced design offers excellent reliability and performance, making it well suited for use in precision switched control, low-noise digital-to-analog conversion, and fast switching design projects. Its pre-biased design also helps to reduce design complexity and is a cost-effective solution compared to other BJT designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MUN2214T1G | ON Semicondu... | -- | 21000 | TRANS PREBIAS NPN 230MW S... |
MUN2211T1G | ON Semicondu... | -- | 6000 | TRANS PREBIAS NPN 338MW S... |
MUN2233T1G | ON Semicondu... | 0.02 $ | 27000 | TRANS PREBIAS NPN 230MW S... |
MUN2213T1G | ON Semicondu... | -- | 12000 | TRANS PREBIAS NPN 338MW S... |
MUN2113T1G | ON Semicondu... | 0.02 $ | 27000 | TRANS PREBIAS PNP 230MW S... |
MUN2211T3G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS NPN 230MW S... |
MUN2232T1G | ON Semicondu... | 0.02 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2240T1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2135T1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2138T1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2141T1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2235T1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2238T1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2112T1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2230T1G | ON Semicondu... | 0.02 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2237T1G | ON Semicondu... | -- | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2136T1G | ON Semicondu... | 0.02 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2140T1G | ON Semicondu... | 0.02 $ | 1000 | TRANS PREBIAS PNP 0.23W S... |
MUN2214T3G | ON Semicondu... | 0.02 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2111T1G | ON Semicondu... | -- | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2111T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2212T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2214T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2241T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2136T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2236T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2137T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2111T3 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2111T3G | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2130T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2130T1G | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2132T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2133T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2134T1 | ON Semicondu... | -- | 1000 | TRANS PREBIAS PNP 230MW S... |
MUN2211JT1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 2.7W SC... |
MUN2211JT1G | ON Semicondu... | -- | 1000 | TRANS PREBIAS NPN 2.7W SC... |
MUN2211T3 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2213JT1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2213JT1G | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
MUN2231T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 338MW S... |
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