Allicdata Part #: | NAND02GR3B2DZA6E-ND |
Manufacturer Part#: |
NAND02GR3B2DZA6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 2G PARALLEL 63VFBGA |
More Detail: | FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 45... |
DataSheet: | NAND02GR3B2DZA6E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Discontinued at Digi-Key |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 2Gb (256M x 8) |
Write Cycle Time - Word, Page: | 45ns |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 63-TFBGA |
Supplier Device Package: | 63-VFBGA (9.5x12) |
Base Part Number: | NAND02G |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NAND02GR3B2DZA6E memory module is a 8-Gigabyte quad-die, stacked NAND Flash module designed for secure enterprise applications. It is based on the NAND02GR3B2 technology, and incorporates both the ONFI and Toggle DDR interconnect technologies, as well as Enhanced Reliability features.
The NAND02GR3B2DZA6E module is a high-performance, high-capacity memory solution targeting enterprise applications. It combines the JEDEC exMMC 4.5 standard and the ONFI 3.0 interconnect technology to overcome the system performance bottleneck caused by traditional interface designs. The module also offers enhanced performance, reliability, and security features that make it ideal for applications in enterprise storage.
The NAND02GR3B2DZA6E module is designed for applications in server and storage systems, networking and embedded systems, mobile devices, and embedded industrial applications. The module employs an 8-Gigabyte quad-die stacked NAND Flash memory design, which offers superior data throughput and reliability compared to conventional memory modules. Built on the NAND02GR3B2 technology platform and incorporating the ONFI and Toggle DDR interconnect technologies, the module can provide up to 825 Mbps data throughput and up to 30,000 program-erase (PE) cycles.
The NAND02GR3B2DZA6E module also incorporates enhanced reliability features, such as an error-correction code system, improved wear-leveling, and fail-safe technology. This reduces the cost and risk associated with data integrity failures and mitigation of data failures. Moreover, the module is also designed to withstand temperature, shock, and vibration environments, making it suitable for rugged applications.
In addition to its robust performance, the NAND02GR3B2DZA6E module also offers security features. These include secure erase and write protection, data encryption, and independent keys for each module. All of these features help protect data from unauthorized access and malicious tampering.
Overall, the NAND02GR3B2DZA6E module is an excellent choice for enterprise applications. It combines high performance, high capacity, and reliability, as well as advanced security features, making it ideal for high-end applications in server and storage systems, networking and embedded systems, mobile devices, and embedded industrial applications.
The specific data is subject to PDF, and the above content is for reference
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