Allicdata Part #: | NAND02GW3B2DZA6E-ND |
Manufacturer Part#: |
NAND02GW3B2DZA6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 2G PARALLEL 63VFBGA |
More Detail: | FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 25... |
DataSheet: | NAND02GW3B2DZA6E Datasheet/PDF |
Quantity: | 23963 |
Series: | -- |
Packaging: | Tray |
Part Status: | Discontinued at Digi-Key |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 2Gb (256M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 63-TFBGA |
Supplier Device Package: | 63-VFBGA (9.5x12) |
Base Part Number: | NAND02G |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NAND02GW3B2DZA6E is a type of non-volatile memory that is frequently used in mobile devices, digital cameras, memory cards, laptops, and any other device that requires a small size and low power consumption. NAND memory offers a wide range of advantages, including cost, expansion capabilities, and low power consumption. NAND02GW3B2DZA6E specifically is a type of NAND flash memory that is notable for its high capacity and excellent read/write performance.
NAND02GW3B2DZA6E is mainly used in applications that require data storage and quick access for reading and writing. This makes it the ideal memory for a wide variety of applications such as solid state drives (SSDs), embedded systems, mobile phones, digital cameras, and gaming consoles, among others. Additionally, NAND02GW3B2DZA6E memory is employed in data storage applications such as digital audio players and USB flash drives which rely on its multiple storage layers.
How NAND02GW3B2DZA6E works is quite simple. It uses a NAND cell or two transistors with one floating gate, each having a select gate on the left side and a control gate on the right side. It stores data in the NAND cell by making an electrical connection between the select gate and the control gate. When the cell is powered, electrons can flow between the select and control gates, allowing data to be written to the cell. As is the case with most memories, reading data from the NAND02GW3B2DZA6E memory simply involves sending a small electrical pulse to the cell, causing the electrons to flow between the select and control gates, thereby allowing the data to be read.
NAND02GW3B2DZA6E also offers several advantages that make it a great choice for use in consumer electronics and data storage applications. For one, it is relatively small in size and has a high storage capacity of up to 4Gbytes. Additionally, NAND02GW3B2DZA6E consumes relatively low power, making it perfect for applications that require low power consumption. This also results in faster data read and write speeds compared to other types of memory. Lastly, since NAND02GW3B2DZA6E is a type of non-volatile memory, it will retain its data even when there is no power available.
In conclusion, NAND02GW3B2DZA6E is a type of non-volatile NAND flash memory that is used in a wide variety of consumer electronics and data storage applications. Its small size, high capacity, and low power consumption make it an ideal choice for use in small and power-efficient devices, including solid state drives, embedded systems, digital cameras, and gaming consoles. Additionally, its non-volatile feature allows it to retain its data even in the absence of power. In summary, NAND02GW3B2DZA6E is an excellent choice for the applications requiring high performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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